Laser & Optoelectronics Progress, Volume. 58, Issue 7, 0700008(2021)

Research Progress of Transverse Mode Control for Vertical Cavity Surface Emitting Lasers

Xiangyuan Wang, Bifeng Cui*, Caifang Li, Jianrong Xu, and Haojie Wang
Author Affiliations
  • Key Laboratory of Opto-Electronics Technology of Ministry of Education, Faculty of Information Technology, Beijing University of Technology, Beijing 100124,China
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    Figures & Tables(22)
    SEM image of a photonic crystal VCSEL[11]
    Near-field pattern and spectra of photonic crystal defect fundamental lasing mode[12]. (a) Single defect; (b) 7-point defect
    Near-field image of photonic crystal VCSEL with two defects[13]
    Far-field intensity profiles for uncoupled and coupled defects[13]
    Structure of PC VCSEL[14]. (a) SEM image of square-lattice PC VCSEL; (b) modified PC VCSEL
    Schematic of QD PC VCSEL[16]. (a) PC structure; (b) cross-sectional view
    Schematic of VCSEL with etched surface-relief[19]
    VCSEL with triangular holey structure [20]
    Light-current characteristics near-field patterns and spectra[20]
    Schematic of 1.3 μm QD VCSEL with surface-relief technique[21]
    Structure of fabricated VCSEL[22]
    Schematic of ellipse surface relief VCSEL[25]
    Cross-section schematic of 10 μm long monolithic VCSEL[26]
    Structure of coupled-resonator VCSEL[29]
    Cross-section schematic of monolithic integrated VCSEL[30]
    Schematic of anti-waveguide VCSEL [31]
    Cross-sectional view of ARROW VCSEL[33]
    ARROW VCSEL structure with oxide island[35]
    Cross-section schematic of HCG integrated VCSEL[37]
    HCG VCSEL transverse mode control[38]. (a) Schematic; (b) calculated angular dependence of HCG for transverse-mode control of VCSEL
    Structure diagram of Si-SiO2 HCG[39]. (a) Three-dimensional structure diagram; (b) cross-sectional view of grating after filling liquid crystal
    • Table 1. Fundamental transverse mode power comparison of 850 nm—1.3 μm band VCSEL under different transverse mode control methods

      View table

      Table 1. Fundamental transverse mode power comparison of 850 nm—1.3 μm band VCSEL under different transverse mode control methods

      TimeWavelength /nmMethodThreshold current /mAPower /mWOperating current /mAOxide aperture /μm

      1999

      2000

      2000

      2004

      2007

      2012

      2000

      2001

      2001

      2002

      2005

      2008

      2013

      1996

      850

      850

      850

      850

      850

      850

      980

      980

      980

      980

      980

      980

      980

      990

      Surface relief[23]

      Surface relief[19]

      Extended resonator[29]

      Surface relief[20]

      HCG[37]

      PC[18]

      Extended resonator[27]

      PC[9]

      Surface relief[21]

      ARROW[30]

      Extended resonator[25]

      Extended resonator [27]

      HCG[38]

      ARROW[32]

      1.5

      2.2

      1.5

      5

      4

      0.9

      1.5

      10

      3

      16

      9.1

      7.5

      1

      0.5

      2

      2.2

      5.2

      7

      2

      3.1

      5

      0.45

      5.7

      7.1

      7.8

      15

      0.5

      1.5

      4

      6

      13.7

      10

      10

      9

      48

      7

      22

      35

      38

      3

      7.5

      7

      9

      10

      15

      10

      8

      7

      12

      7

      8

      6

      9

      6

      10

      2008990(QD)PC[16]4.25.73518
      20081300(QD)PC[16]4.750.25626
      20111300(QD)Surface relief[21]2.153.4215
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    Xiangyuan Wang, Bifeng Cui, Caifang Li, Jianrong Xu, Haojie Wang. Research Progress of Transverse Mode Control for Vertical Cavity Surface Emitting Lasers[J]. Laser & Optoelectronics Progress, 2021, 58(7): 0700008

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    Paper Information

    Category: Reviews

    Received: Aug. 10, 2020

    Accepted: Sep. 8, 2020

    Published Online: Apr. 25, 2021

    The Author Email: Cui Bifeng (cbf@bjut.edu.cn)

    DOI:10.3788/LOP202158.0700008

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