Chinese Journal of Quantum Electronics, Volume. 40, Issue 3, 301(2023)
Research progress of tunable terahertz metamaterial absorbers
Figures & Tables(10)
![Terahertz absorber based on metal-patch. (a) Schematic diagram of structure and (b) the absorption curve at different incident angles under TE and TM polarization of the terahertz metamaterial absorber based on three-layer structure proposed by Tao et al [27];(c) Schematic diagram of structure and (d) the tunable changes of absorption curves depend on length l1 and l4 of the terahertz metamaterial absorber with multiband absorption proposed by Wang et al [28]](/Images/icon/loading.gif){kind=icon}
Fig. 1. Terahertz absorber based on metal-patch. (a) Schematic diagram of structure and (b) the absorption curve at different incident angles under TE and TM polarization of the terahertz metamaterial absorber based on three-layer structure proposed by Tao et al [27];(c) Schematic diagram of structure and (d) the tunable changes of absorption curves depend on length l1 and l4 of the terahertz metamaterial absorber with multiband absorption proposed by Wang et al [28]
Fig. 3. Single-band tunable terahertz metamaterial absorber. (a) Schematic diagram of structure and (b) the tunable changes of absorption curves depend on different Fermi energy level of the narrow band tunable terahertz absorber based on Dirac semi-metal proposed by Liu et al [34]; (c) Schematic diagram of structure and (d) the tunable changes of absorption curves depend on different temperature and Fermi energy level of the tunable terahertz metamaterial absorber based on hybrid materials proposed by Huang et al [35]
Fig. 4. Multi-band tunable terahertz metamaterial absorber. (a) Schematic diagram of structure and (b) the tunable changes of absorption curves depend on different Fermi energy level of the double band tunable terahertz metamaterial absorber with five layers proposed by Chen et al [50]; (c) Schematic diagram of structure and (d) the tunable changes of absorption curves depend on different Fermi energy level of the double band tunable terahertz absorber based on Dirac semi-metal proposed by Zhang et al [51]
Fig. 5. Broadband tunable terahertz metamaterial absorber. (a) Schematic diagram of structure and (b) the tunable changes of absorption curves depend on different conductivity of the narrow band tunable terahertz absorber based on vanadium oxide proposed by Song et al [65]; (c) Schematic diagram of structure and (d) the tunable changes of absorption curves depend on different Fermi energy level of the wide band tunable terahertz absorber based on graphene proposed by Mou et al [66]
Fig. 6. Switchable bifunctional terahertz metamaterial absorber. (a) Schematic diagram of structure and (b) the tunable changes of absorption curves depend on different temperature of the double broadband switchable terahertz absorber proposed by Zhao et al [32];(c) Schematic diagram of structure and (d) the tunable changes of absorption curves depend on different Fermi energy level of the wide band and narrow band switchable dual function terahertz absorber based on graphene and vanadium dioxide composite proposed by Zhang et al [33]; (e) Schematic diagram of structure and (f) the tunable changes of absorption curves depend on different Fermi energy level of the switchable bifunctional terahertz absorber based on Dirac semi metal and vanadium dioxide proposed by Li et al [85]
Table 1. Summary of single-band tunable terahertz metamaterial absorber
View tableView in ArticleTable 1. Summary of single-band tunable terahertz metamaterial absorber
Layer Material Parameter Fequency Absorptance Function Reference 3 Graphene Ef : 0～0.6 eV 0.48~1.579 THz >99% Single-band
tunable terahertz
metamaterial absorber
[ 36 ]3 Dirac semimetal Ef : 65~85 meV 2.46~3.16 THz >95% [ 37 ]4 Dirac semimetal
Strontium titanate
Ef : 10~80 meV
T: 300 K
3.265~4.82 THz 70%～99.9% [ 38 ]T: 200~300 K
Ef =40 meV
2.665~3.69 THz >99% 3 Strontium titanate T: 200~400 K 1.71～2.48 THz >99% [ 39 ]7 Liquid crystal V: 0～saturation red shift >90% [ 40 ]4 InSb T: 160~350 K 0.82~1.02 THz >88.7% [ 41 ]3 Photoconductive silicon σ: 1~1×105 S/m 0%～100% [ 42 ]
Table 2. Summary of multi-band tunable terahertz metamaterial absorber
View tableView in ArticleTable 2. Summary of multi-band tunable terahertz metamaterial absorber
Layer Material Parameter Frequency Absorptance Function Reference 3 Graphene Ef : 0.6~0.9 eV 7.1~8.7 THz
10.4~12.7 THz
>85% Dual-band absorption [ 52 ]3 Dirac semimetal
VO2
σ: 10~105 S/m
Ef =0.13 eV
6.5%～97.8%
10%～99.27%
9%～99.54%
Triple-band absorption [ 53 ]Ef : 0.11~0.15 eV
σ=105 S/m
blue shift >90% 3 Strontium titanate T: 200~500 K blue shift >95% Dual-band absorption [ 54 ]7 Liquid crystal V: 0～12 V red shift >80.1% Dual-band absorption [ 55 ]
Table 3. Summary of broadband tunable terahertz metamaterial absorber
View tableView in ArticleTable 3. Summary of broadband tunable terahertz metamaterial absorber
Layer Material Parameter Frequency Absorptance Function Reference 4 Dirac semimetal
Strontium titanate
Ef : 40～0 meV
T=300 K
unchanged
1.43～1.58 THz
>80% BW=0.65 THz
(absorptance>80%)
[ 67 ]T: 250～400 K
Ef =45 meV
1.14～1.35 THz
1.51～1.76 THz
>80% 3 Graphene Ef : 0～0.7 eV 1%～99% BW=0.76 THz
(absorptance>90%)
[ 68 ]3 Graphene
Graphene
Ef : 0.6～1.0 eV 3.35～4.15 THz >70% BW=1.13 THz
(absorptance>90%)
[ 69 ]5 Ef : 0.7～1.1 eV 2.86～5.08 THz
～
3.16～6.01 THz
>85% BW=2.85 THz
(absorptance>90%)
4 Graphene
VO2
σ: 10～2×105 S/m
Ef =0.1 eV
28%～99% BW=1.70 THz
(absorptance>90%)
[ 70 ]Ef : 0.1～0.6 eV
σ=2×105 S/m
Blue shift >90% 3 Dirac semimetal Ef : 40～80 meV Blue shift BW=2.70 THz
(absorptance>90%)
[ 71 ]3 VO2 σ: 200～2×105 S/m 4%～100% BW=4.10 THz
(absorptance>90%)
[ 64 ]5 Graphene
Dirac semimetal
Ef : 0 ~1.7 eV
Ef = 60 meV
5～7.44 THz
～
4.79～8.99 THz
>80%
BW=4.20 THz
(absorptance>90%)
[ 72 ]Ef : 10~100 meV
Ef =1.7 eV
Blue shift
Table 4. Summary of switchable bifunctional terahertz metamaterial absorber
View tableView in ArticleTable 4. Summary of switchable bifunctional terahertz metamaterial absorber
Layer Material Parameter Frequency Absorptance Function Reference 6 VO2 σ: 0～105 S/m Narrowband absorption switch to
broadband absorption
[ 86 ]5 Graphene
VO2
σ: 40～2×105 S/m
Ef= 0.7 eV
broadband absorption switch to
triple-band absorption
[ 87 ]Ef : 0～0.7 eV
σ= 40 S/m
20%～100% BW=1.52 THz(absorptance>90%) Ef : 0.5～1.0 eV
σ=2×105 S/m
1～1.1 THz
2.2～2.65 THz
2.55～3.16 THz
>90% triple-band absorption 6 Graphene
VO2
σ: 200～2×105 S/m
Ef= 0.9 eV
six-band absorption switch to
broadband absorption
[ 88 ]σ=2×105 S/m >90% BW=3.83 THz(absorptance>90%) Ef : 0 eV～1.0 eV
σ= 200 S/m
blue shift >85.1% six-band absorption 6 Graphene
VO2
σ: 0 S/m～2×105 S/m
Ef= 0.7 eV
broadband absorption switch to broadband absorption [ 89 ]σ=2×105 S/m >90% BW=2.25 THz(absorptance>90%) Ef : 0.01 eV～0.7 eV
σ= 200 S/m
5.2%～99.8% bandwidth=1.20 THz(absorptance>90%) 4 Graphene Ef : 150 meV～550 meV broadband absorption switch to
triple-band absorption
[ 90 ]3 Photoconductive silicon σ: 1 S/m～5×105 S/m red shift dual-band absorption switch to
single-band absorption
[ 91 ]5 Photoconductive silicon
VO2
σ(Si): 2.5×10-4 S/m
σ(VO2): 2×105 S/m
>90% BW=4.66 THz(absorptance>90%) [ 92 ]σ(Si): 8×104 S/m
σ(VO2): 20 S/m
>90% dual-band absorption σ(Si): 2.5×10-4～3×105 S/m
σ(VO2) =20 S/m
4%～99% σ(Si): 2.5×10-4～3×105 S/m
σ(VO2) =2×105 S/m
60%～99% σ(VO2): 20～2×105 S/m
σ(Si) =2.5×10-4 S/m
2%～99% σ(VO2): 20～2×105 S/m
σ(Si) =8×104 S/m
69%～99%
Tools
Get Citation
Copy Citation Text
Ruoya ZHANG, Qiaofen ZHU, Yan ZHANG. Research progress of tunable terahertz metamaterial absorbers[J]. Chinese Journal of Quantum Electronics, 2023, 40(3): 301
Paper Information
Category:
Received: Sep. 28, 2022
Accepted: --
Published Online: Jun. 30, 2023
The Author Email: ZHU Qiaofen (zhuqiaofen@hebeu.edu.cn), ZHANG Yan (yzhang@cnu.edu.cn)
© Copyright 2018-2021 | Chinese Laser Press.
All Rights Reserved 沪ICP备15018463号-20