Fig. 1. Atomic absorption cross sections at EUV of different elements^[9]

Fig. 2. Mechanism of CAR^[24]

Fig. 3. Mechanism of the PMMA photochemical reaction^[26]

Fig. 4. EUV lithography patterns of PMMA photoresist^[30]

Fig. 5. Polycarbonate photoresists. (a) Photoresists in Ref. [35]; (b) photoresists in Ref. [36]

Fig. 6. Polysulfone photoresists. (a) Polysulfone polymers^[37]; (b) polysulfone-PMMA polymers^[38]

Fig. 7. Non-CARs based on Poly-p-hydroxystyrene derivatives^［39-40］. (a) Matrix materials with photosensitive groups; (b)-(d) Matrix materials with olefinic or alkynyl groups; (e) free radical initiators; (f) (g) multi-mercapto crosslinkers

Fig. 8. Non-CARs with side-linked sulfonium ions ^[42]

Fig. 9. Matrix materials of ESCAP photoresist and their acid-catalyzed reaction^[44]

Fig. 10. EUV lithography patterns of EUV-2D and MET-1K^[49]. (a) (b) EUV-2D; (c) (d) MET-1K

Fig. 11. Polymethacrylate photoresists with side-linked leaving groups containing oxygen^[50]

Fig. 12. Low activation energy photoresists and their acid-catalyzed reaction^[51]

Fig. 13. EUV patterns of KRS photoresists^[54]. (a) 35 nm linewidth, 1:1 duty cycle; (b) 28.3 nm linewidth, 1:4 duty cycle

Fig. 14. Polymeric photoresists with side-linked photoacid generators. (a) Cation^[55]; (b) anion^[56]

Fig. 15. Process flow of PSCARs^[59]

Fig. 16. Mechanism of the generation of photosenitizers from their precursos in PSCARs^[61]

Fig. 17. Mechanism of photochemisry reaction in PSCARs^[61]

Fig. 18. Comparison of roughness between polymer photoresists and single molecule resin photoresists^[24]

Fig. 19. Model of single-molecule resin CAR^[68]

Fig. 20. Dendritic single-molecule resin with triphenyl core^[70]

Fig. 21. Dendritic single-molecule resin^{［67， 71-74］}

Fig. 22. TAS-tBoc-Ts single-molecule resin photoresist and its lithography mechanism^[75]

Fig. 23. TAS-tBoc-Ts single-molecule resin^[76]. (a) Structure; (b) mechanism

Fig. 24. Negative-tone single-molecule resin photoresists with ethylene oxide groups^[77-79]

Fig. 25. Early calixarene photoresists. (a) Photoresists in Ref. [80]; (b) photoresists in Ref. [81]

Fig. 26. Calixarene photoresists ^[84]

Fig. 27. Noria Photoresists^[86]

Fig. 28. HSQ photoresist. (a) Molecular structure ^[89]; (b) reaction mechanism ^[90]

Fig. 29. Polymeric photoresist with silicon-containing side group^［92］

Fig. 30. Polymeric photoresist with silicon- or boron-containing side group^[93]

Fig. 31. Metal nanoparticle photoresists ^[97]

Fig. 32. Schematic of the ligand-displacement patterning mechanism for negative-tone pattern formation^[107]

Fig. 33. Mechanism for the particle size increase of the negative-tone nanoparticle photoresists^[108]

Fig. 34. Mechanism for solubility switching reactions induced by electron beam irradiation^[109]

Fig. 35. Metal nanoparticle photoresists with polymeric ligands containing sulfurium ^[110]. (a) Structure; (b) patterns

Fig. 36. Tin-oxo cluster photoresists^[111]. (a) Structure; (b) patterns

Fig. 37. Structure and EUV patterns of Zn-nTA cluster^[117]

Fig. 38. Structure of Zn(MA)(TFA) clusters^[118]

Fig. 39. Structure and photolithography patterns of polymeric photoresists with cobalt^[119]

Fig. 40. Bismuth oligomer and their photolithography patterns^[120]

Fig. 41. Polymeric photoresist with ferrocene and sulfonium and its photolighography patterns^[121]

Fig. 42. Oxalic acid complexes of palladium and platinum and their photoreaction mechanism^[122]

Fig. 43. JP-20 and its photolithography patterns^[123]

Fig. 44. Photoresists with six-coordinated compounds of group VIII elements and their photolithography patterns^[126]

Fig. 45. Single-molecule resin photoresists and their photolithography patterns. (a) Bisphenol A type^[128]; (b) spirobifluorene type^[129]

Fig. 46. Metal complexes photoresists. (a) Metalloporphyrin type^[133]; (b) metallocene type^[134]