Development of Extreme Ultraviolet Photoresists

Xudong Guo; Guoqiang Yang; Yi Li

doi:10.3788/LOP202259.0922004

Laser & Optoelectronics Progress, Volume. 59, Issue 9, 0922004(2022)

Development of Extreme Ultraviolet Photoresists

Xudong Guo^1,3、†, Guoqiang Yang^1,3、†,*, and Yi Li^2,3

¹Key Laboratory of Photochemistry, Chinese Academy of Sciences, Beijing National Laboratory for Molecular Sciences, Beijing 100190, China

²Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China

³University of Chinese Academy of Sciences, Beijing 100039, China

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As Extreme Ultraviolet (EUV) lithography has become the most advanced lithography technology applied in the semiconductor manufacturing industry, corresponding EUV photoresists have also developed significantly in recent years. Herein, the development of polymeric, single-molecule-resin, and organic-inorganic hybrid EUV photoresists has been reviewed, considering the new problems and challenges faced by EUV lithography. It should benefit the researchers in the EUV lithography and photoresist.

Keywords

extreme ultraviolet lithography extreme ultraviolet photoresist lithography material

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Xudong Guo, Guoqiang Yang, Yi Li. Development of Extreme Ultraviolet Photoresists[J]. Laser & Optoelectronics Progress, 2022, 59(9): 0922004

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