[1] [1] Manabu M, Uetake A, Simoyama T, et al. 1.3-μm-wavelength AlGaInAs multiple-quantum-well semi-insulating buried-hetero structure distributed-reflector laser arrays on semi-insulating InP substrate［J］. IEEE Journal of Selected Topics in Quantum Electronics, 2015, 21(6): 1502307.

[2] [2] Otsubo K, Matsuda M, Takada K, et al. Uncooled 25-Gbit/s direct modulation of semi-insulating buried-heterostructure 1.3-μm AlGaInAs quantum-well DFB lasers［J］. Electronic Letters, 2008, 44(10): 631-633.

[3] [3] Nakahara K, Wakayama Y, Kitatani T, et al. 80 ℃, 50-Gb/s directly modulated InGaAlAs BH-DFB lasers［C］. IEEE 24th International Semiconductor Laser Conference, 2014: 66-67.

[4] [4] IEEE Standard Association. IEEE Standard 802.3［S］. Piscataway: IEEE Standard Association, 2012.

[5] [5] Zhu H L, Xu X D, Wang H, et al. The fabrication of eight-channel DFB laser array using sampled gratings［J］. IEEE Photonics Technology Letters, 2010, 22(5): 353-355.

[6] [6] Sarangan A M, Xu C L, Huang W P, et al. Analysis of multi-wavelength DFB laser arrays with different ridge widths［C］. Integrated Photonics Research, 1995: 187-189.

[7] [7] Fujisawa T, Kanazawa S, Takahata K, et al. 1.3-μm, 4×25-Gbit/s, EADFB laser array module with large-output-power and low-driving-voltage for energy-efficient 100GbE transmitter［J］. Optics Express, 2012, 20(1): 614-620.

[8] [8] Guo F, Zhang R K, Lu D, et al. 1.3-μm multi-wavelength DFB laser array fabricated by MOCVD selective area growth［J］. Optics Communications, 2014, 331: 165-168.

[9] [9] Jiang Shan, Dong Lei, Zhang Ruikang, et al. Processing parameters optimization of Cl2/H2 ICP etching and its used for the fabrication of 1.55 μm DFB Laser［J］. Journal of Optoelectronics·Laser, 2009, 20(5): 583-586.

[10] [10] Ma Xiaotao, Zheng Wanhua, Ren Gang, et al. Inductively coupled plasma etching of two-dimensional InP/InGaAsP_based photonic crystal［J］. Acta Physica Sinica, 2007, 56(2): 977-981.

[11] [11] Zhao Jianyi, Chen Xin, Zhou Ning, et al. Reliability study of DFB laser fabricated by nanoimprint technology［J］. Acta Optica Sinca, 2014, 34(2): 0206003.

[12] [12] Dylewicz R, Bryce A C, Sorel M, et al. High aspect ratio inductively coupled plasma (ICP) etching of InP/InGaAsP/AlGaInAs using Cl2/Ar/N2 gas mixture［C］. European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference, 2009.

[13] [13] Wang Jian, Xiong Bing, Sun Changzheng, et al. Etched-facet AlGaInAs/AlInAs semiconductor laser fabricated by Cl2/BCl3/CH4 inductively coupled plasma［J］. Chinese J Lasers, 2005, 32(8): 1031-1034.