Journal of Semiconductors, Volume. 44, Issue 6, 062805(2023)
Preparation of Sn-doped Ga2O3 thin films and their solar-blind photoelectric detection performance
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Fig. 1. (Color online) Schematic diagram of solar-blind photodetector with MSM structure.
Fig. 3. (Color online) SEM of Ga2O3 thin films: (a) unannealed, (b) annealed in nitrogen, (c) annealed in air. (d) EDS spectra of Ga2O3 thin films.
Fig. 4. (Color online) The XPS analysis for the Ga2O3 thin films: (a) survey peaks, (b) Ga 3d spectra, (c) Sn 3d spectra, and (d) O 1s spectra.
Fig. 5. (Color online) (a) Transmission spectra of Ga2O3 thin films. (b) The plot of (αhν)2–hν.
Fig. 6. (Color online) (a) I–V curve in dark condition. (b) I–V curve at 254 nm wavelength illumination. (c) I–V curve at 365 nm wavelength illumination of Ga2O3 thin films.
Fig. 7. (Color online) Photocurrent at 254, 365 nm illumination and dark current logarithmic curves of Ga2O3 thin films: (a) unannealed, (b) annealed in nitrogen, (c) annealed in air.
Fig. 8. (Color online) I–t curves of Ga2O3 solar-blind photoelectric devices: (a) unannealed, (b) annealed in nitrogen, (c) annealed in air, (d) unannealed (part of (a)), (e) annealed in nitrogen (part of (b)), (f) annealed in air ((part of (c)).
Fig. 9. (Color online) Curve of photo-dark current ratio (PDCR) changing with bias voltage.
Table 1. Key parameters of Ga2O3 thin film photoelectric detector.
View tableView in ArticleTable 1. Key parameters of Ga2O3 thin film photoelectric detector.
Material Structure PDCR R (A/W) EQE (%) D* (Jones) τr/τd Ref. Ni/Au/β-Ga2O3 MSM 103 1.4 × 10−3 0.5 2.0 × 1012 1.1 s/0.3 s [ 36 ]Au/β-Ga2O3/Si MSM 6.13 96.13 4.77 × 104 – 32 ms/78 ms [ 37 ]Ni/Au/β-Ga2O3/Ti/Au MSM 104 9.78 4.25 × 103 3.92 × 1014 5.19 μs [ 38 ]Au/Graphene/β-Ga2O3/In MSM – 6.1 2.98 × 103 – 0.62 s/0.67 s [ 39 ]Graphene/β-Ga2O3 wafer MSM 2.28 × 102 0.01 5 – 30 ns/2.24 μs [ 40 ]α/β-Ga2O3 NRAS PEC 2.0 × 103 2.6 × 10−4 – 2.8 × 109 0.54 s/1.63 s [ 41 ]β-Ga2O3 NRAS PEC 28.97 3.8 × 10−3 1.86 0.29 s/0.16 s [ 42 ]LIG(Graphene)/Ga2O3 – 3.72 × 103 0.043 – 6.73 × 1012 0.4 s/0.06 s [ 43 ]Ti/Au/β-Ga2O3 MSM 510 0.06 28.3 – 2.92 s/2.97 s [ 44 ]Ti/Au/β-Ga2O3 MSM 773 91.9 – 7.2 × 1013 5.4 s/2.1 s [ 45 ]Au/β-Ga2O3/Au MSM 1.6 × 103 18.23 – – 0.44 s/0.72 s [ 46 ]α-Ga2O3/Cu2O PEC – 4.2 × 10−4 – – 10.3 s/10.1 s [ 47 ]MSM@Unannealed 4.21 × 105 1.86 9.08 × 102 4.94 × 1011 0.54 s/0.6 s β-Ga2O3 thin films MSM@N2 annealed 1.75 × 106 12.47 6.09 × 103 2.61 × 1012 0.37 s/0.09 s This work MSM@Air annealed 9.44 × 105 8.56 4.18 × 103 1.59 × 1012 0.39 s/0.12 s
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Lijun Li, Chengkun Li, Shaoqing Wang, Qin Lu, Yifan Jia, Haifeng Chen. Preparation of Sn-doped Ga2O3 thin films and their solar-blind photoelectric detection performance[J]. Journal of Semiconductors, 2023, 44(6): 062805
Paper Information
Category: Articles
Received: Nov. 19, 2022
Accepted: --
Published Online: Jul. 6, 2023
The Author Email: Li Lijun (lilijun007@163.com), Li Chengkun (lilijun007@163.com), Wang Shaoqing (lilijun007@163.com), Lu Qin (lilijun007@163.com), Jia Yifan (lilijun007@163.com), Chen Haifeng (lilijun007@163.com)
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