[1] Yonenaga I. Thermo-mechanical stability of wide-bandgap semiconductors: high temperature hardness of SiC, AlN, GaN, ZnO and ZnSe[J]. Physica B: Condensed Matter, 308/309, 1150-1152(2001).

[2] Nie Y, Wang Y Y, Wu X Q et al. Ultrafast carrier dynamics in n-type and semi-insulating 6H-SiC crystals[J]. Laser & Optoelectronics Progress, 56, 063201(2019).

[3] Yang C, Li F K, Ren T et al. Fast and high quality composite processing method for silicon carbide wafers[J]. Acta Optica Sinica, 40, 1322001(2020).

[4] Chen X H, Li X, Wu C et al. Influence of water jet assisted laser processing silicon carbide[J]. Laser & Optoelectronics Progress, 56, 011405(2019).

[5] Liu R, Wu H, Zhang H D et al. A dry etching method for 4H-SiC via using photoresist mask[J]. Journal of Crystal Growth, 531, 125351(2020).

[6] McDaniel G, Lee J W, Lambers E S et al. Comparison of dry etch chemistries for SiC[J]. Journal of Vacuum Science & Technology A, 15, 885-889(1997).

[7] Xia J H, Rusli, Choy S F et al. CHF3-O2 reactive ion etching of 4H-SiC and the role of oxygen[J]. Microelectronic Engineering, 83, 381-386(2006).

[8] Liu G, Xu Y, Xu C et al. Effects and mechanisms of RIE on SiC inversion layer mobility and its recovery[J]. Applied Surface Science, 324, 30-34(2015).

[9] Liu Y H, Sun Y J, Zhao G J et al. Crystal structure induced residue formation on 4H-SiC by reactive ion etching[J]. AIP Advances, 6, 065219(2016).

[10] Jiang L D, Cheung R, Brown R et al. Inductively coupled plasma etching of SiC in SF6/O2 and etch-induced surface chemical bonding modifications[J]. Journal of Applied Physics, 93, 1376-1383(2003).

[11] Zhang Y, Li R L, Zhang Y J et al. Indiscriminate revelation of dislocations in single crystal SiC by inductively coupled plasma etching[J]. Journal of the European Ceramic Society, 39, 2831-2838(2019).

[12] Li J J, Cheng X H, Wang Q et al. Morphology improvement of SiC trench by inductively coupled plasma etching using Ni/Al2O3 bilayer mask[J]. Materials Science in Semiconductor Processing, 67, 104-109(2017).

[13] Chen G, Li Z Y, Chen Z et al. Study of metal mask in 4H-SiC MESFET process[J]. Semiconductor Technology, 33, 241-243(2008).

[14] Ozgur M, Pedersen M, Huff M. Comparison of the etch mask selectivity of nickel and copper for a deep, anisotropic plasma etching process of silicon carbide (SiC)[J]. ECS Journal of Solid State Science and Technology, 7, 55-59(2018).

[15] Zhang W, Sun Y P, Liu B. Rapid and uniform etching of SiC materials by NLD[J]. Micronanoelectronic Technology, 52, 54-58, 63(2015).

[16] Tasaka A, Kotaka Y, Oda A et al. Smoothing single-crystalline SiC surfaces by reactive ion etching using pure NF3 and NF3/Ar mixture gas plasmas[J]. Journal of Vacuum Science & Technology A, 32, 051303(2014).

[17] Tseng Y H, Tsui B Y. Microtrenching-free two-step reactive ion etching of 4H-SiC using NF3/HBr/O2 and Cl2/O2[J]. Journal of Vacuum Science & Technology A, 32, 031601(2014).

[18] Kathalingam A, Kim M R, Chae Y S et al. Self assembled micro masking effect in the fabrication of SiC nanopillars by ICP-RIE dry etching[J]. Applied Surface Science, 257, 3850-3855(2011).

[19] Ito H, Kuwahara T, Kawaguchi K et al. Tight-binding quantum chemical molecular dynamics simulations for the elucidation of chemical reaction dynamics in SiC etching with SF6/O2 plasma[J]. Physical Chemistry Chemical Physics, 18, 7808-7819(2016).

[20] Efremov A, Kang S, Kwon K H et al. Etching characteristics and mechanisms of SiC thin films in inductively-coupled HBr-Ar, N2, O2 plasmas[J]. Journal of Vacuum Science & Technology A, 29, 06B103(2011).

[21] Zhuang S W, Tang J L, Gu Z Q et al. Microscale pattern etch of 4H-SiC by inductively coupled plasma[J]. Journal of Materials Science: Materials in Electronics, 30, 18788-18793(2019).

[22] Sun Y N, Shi Y B, Wang H et al. A mask material for SiC ICP etching[J]. Micronanoelectronic Technology, 54, 499-504(2017).

[23] Cui H B, Liang T, Xiong J J et al. Study on etch rate and surface morphology of silicon carbide by ICP[J]. Instrument Technique and Sensor, 1-3, 7(2015).

[24] SaifAddin B K, Almogbel A, Zollner C J et al. Fabrication technology for high light-extraction ultraviolet thin-film flip-chip (UV TFFC) LEDs grown on SiC[J]. Semiconductor Science and Technology, 34, 035007(2019).

[25] Osipov A A, Iankevich G A, Speshilova A B et al. High-temperature etching of SiC in SF6/O2 inductively coupled plasma[J]. Scientific Reports, 10, 19977(2020).

[26] Choi J H, Latu-Romain L, Bano E et al. Fabrication of SiC nanopillars by inductively coupled SF6/O2 plasma etching[J]. Journal of Physics D, 45, 235204(2012).

[27] Fan W Z, Qiao D Y[M]. Micro electromechanical systems, 77-81(2011).

[28] Tong J M, Ning Y W, Yan W et al. Design for adjusting gap mechanism in proximity aligner[J]. Machinery Design & Manufacture, 43-44(2008).