Effects of Reactive Ion Etching Parameters on Etching Rate and Surface Roughness of 4H-SiC

Zehong Wan; Enkang Cui; Shengtao Yu; Yu Lei; Chengqun Gui; Shengjun Zhou

doi:10.3788/LOP202158.1922002

Laser & Optoelectronics Progress, Volume. 58, Issue 19, 1922002(2021)

Effects of Reactive Ion Etching Parameters on Etching Rate and Surface Roughness of 4H-SiC

Zehong Wan¹, Enkang Cui¹, Shengtao Yu², Yu Lei², Chengqun Gui¹, and Shengjun Zhou^1,2、*

Author Affiliations

¹The Institute of Technological Science, Wuhan University, Wuhan , Hubei 430072, China

²School of Power and Mechanical Engineering, Wuhan University, Wuhan , Hubei 430072, China

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Zehong Wan, Enkang Cui, Shengtao Yu, Yu Lei, Chengqun Gui, Shengjun Zhou. Effects of Reactive Ion Etching Parameters on Etching Rate and Surface Roughness of 4H-SiC[J]. Laser & Optoelectronics Progress, 2021, 58(19): 1922002

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Paper Information

Category: Optical Design and Fabrication

Received: Dec. 28, 2020

Accepted: Feb. 4, 2021

Published Online: Oct. 14, 2021

The Author Email: Zhou Shengjun (zhousj@whu.edu.cn)

DOI:10.3788/LOP202158.1922002

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology