Researching | Research on the application of circular off-field instantaneous photoelastic phaseshift splicing measurement based on ultra-depth of field algorithm

Optical Instruments, Volume. 46, Issue 6, 42(2024)

Research on the application of circular off-field instantaneous photoelastic phaseshift splicing measurement based on ultra-depth of field algorithm

Xiaoxiao WEI*... Zhenlei WANG, Jiaxin WANG and Zhenqiu DAI |Show fewer author(s)

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School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China

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References(4)

[2] IMAFUKU M, AKITA K, SHOBU T. State of the art X-ray diffraction methods for measuring stress state in a single crystal[J]. Transactions of the Materials Research Society of Japan, 33, 381-384(2008).

[4] HASUIKE N, MAEDA I, ISAJI S et al. Micro-Raman spectroscopy of bending stresses in β-Ga₂O₃(001) wafer[J]. Japanese Journal of Applied Physics, 62, SF1020(2023).

[5] GAMARTS E M, DOBROMYSLOV P A, KRYLOV V A et al. Characterization of stress in semiconductor wafers using birefringence measurements[J]. Journal de Physique III, 3, 1033-1049(1993).

[7] HERMS M, IRMER G, SPIRA S et al. The photoelastic constant of (0001) 4H silicon carbide determined by scanning infrared polariscopy[J]. Physica Status Solidi (A), 218, 2100198(2021).

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Xiaoxiao WEI, Zhenlei WANG, Jiaxin WANG, Zhenqiu DAI. Research on the application of circular off-field instantaneous photoelastic phaseshift splicing measurement based on ultra-depth of field algorithm[J]. Optical Instruments, 2024, 46(6): 42

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Received: Nov. 14, 2023

Accepted: --

Published Online: Jan. 21, 2025

The Author Email: WEI Xiaoxiao (weixx@usst.edu.cn)

DOI:10.3969/j.issn.1005-5630.202311140125

Topics

laser devices and laser physics

Lasers and Laser Optics

laser manufacturing

Instrumentation, Measurement and Metrology