Journal of Radiation Research and Radiation Processing, Volume. 41, Issue 6, 060703(2023)

Impact of different parameters on the static random access memory under the total ionizing dose

Fuqiang ZHANG1... Qiming CHEN1, Yihao GONG1, Shuyan XIAO1, Zheng ZHANG1, Xu MA1, Shuyong ZHAO1, Hongchao ZHENG2, Jianpeng ZHANG2 and Gang GUO1,* |Show fewer author(s)
Author Affiliations
  • 1National Innovation Center of Radiation Application, China Institute of Atomic Energy, Beijing 102413, China
  • 2Beijing Institute of Microelectronics Technology, Beijing 100076, China
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    References(11)

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    [6] Yi DONG, Mingjie SHEN, Qi LIU. Comparison of total ionizing dose effect between floating gate device and NMOS device. Spacecraft Environment Engineering, 35, 468-472(2018).

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    [8] Hongxia GUO, Wei WANG, Fengqi ZHANG et al. Future challenges in total ionizing dose for advanced CMOS technologies. Nuclear Electronics & Detection Technology, 31, 115-119(2011).

    [9] Yuxiong XUE, Zhou CAO, Zuyou GUO et al. Study of total ionization dose test of power MOSFET for satellite applications. Nuclear Electronics & Detection Technology, 28, 538-542(2008).

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    Fuqiang ZHANG, Qiming CHEN, Yihao GONG, Shuyan XIAO, Zheng ZHANG, Xu MA, Shuyong ZHAO, Hongchao ZHENG, Jianpeng ZHANG, Gang GUO. Impact of different parameters on the static random access memory under the total ionizing dose[J]. Journal of Radiation Research and Radiation Processing, 2023, 41(6): 060703

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    Paper Information

    Category: Research Articles

    Received: Nov. 8, 2022

    Accepted: Feb. 12, 2023

    Published Online: Jan. 3, 2024

    The Author Email: GUO Gang (郭刚)

    DOI:10.11889/j.1000-3436.2022-0120

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