Journal of Radiation Research and Radiation Processing, Volume. 41, Issue 6, 060703(2023)
Impact of different parameters on the static random access memory under the total ionizing dose
Fig. 2. Statical power current of the SRAM under different total doses and dose rates: (a) 180 nm; (b) 65 nm
Fig. 3. (a) Statical power current of the 28 nm SRAM under different total doses and dose rates; (b) increasment ratio of the device under different doses
Fig. 4. Dynamic current of the 28 nm SRAM with and without the radiation
Fig. 6. Typical dose rate and the nonuniformity of the source (color online)
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Fuqiang ZHANG, Qiming CHEN, Yihao GONG, Shuyan XIAO, Zheng ZHANG, Xu MA, Shuyong ZHAO, Hongchao ZHENG, Jianpeng ZHANG, Gang GUO. Impact of different parameters on the static random access memory under the total ionizing dose[J]. Journal of Radiation Research and Radiation Processing, 2023, 41(6): 060703
Category: Research Articles
Received: Nov. 8, 2022
Accepted: Feb. 12, 2023
Published Online: Jan. 3, 2024
The Author Email: GUO Gang (郭刚)