Journal of Radiation Research and Radiation Processing, Volume. 41, Issue 6, 060703(2023)

Impact of different parameters on the static random access memory under the total ionizing dose

Fuqiang ZHANG1... Qiming CHEN1, Yihao GONG1, Shuyan XIAO1, Zheng ZHANG1, Xu MA1, Shuyong ZHAO1, Hongchao ZHENG2, Jianpeng ZHANG2 and Gang GUO1,* |Show fewer author(s)
Author Affiliations
  • 1National Innovation Center of Radiation Application, China Institute of Atomic Energy, Beijing 102413, China
  • 2Beijing Institute of Microelectronics Technology, Beijing 100076, China
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    Figures & Tables(6)
    Picture of the device under 60Co irradiation
    Statical power current of the SRAM under different total doses and dose rates: (a) 180 nm; (b) 65 nm
    (a) Statical power current of the 28 nm SRAM under different total doses and dose rates; (b) increasment ratio of the device under different doses
    Dynamic current of the 28 nm SRAM with and without the radiation
    Influence of the temperature on the TID
    Typical dose rate and the nonuniformity of the source (color online)
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    Fuqiang ZHANG, Qiming CHEN, Yihao GONG, Shuyan XIAO, Zheng ZHANG, Xu MA, Shuyong ZHAO, Hongchao ZHENG, Jianpeng ZHANG, Gang GUO. Impact of different parameters on the static random access memory under the total ionizing dose[J]. Journal of Radiation Research and Radiation Processing, 2023, 41(6): 060703

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    Paper Information

    Category: Research Articles

    Received: Nov. 8, 2022

    Accepted: Feb. 12, 2023

    Published Online: Jan. 3, 2024

    The Author Email: GUO Gang (郭刚)

    DOI:10.11889/j.1000-3436.2022-0120

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