Journal of Radiation Research and Radiation Processing, Volume. 41, Issue 6, 060703(2023)
Impact of different parameters on the static random access memory under the total ionizing dose
The effect of the total ionizing dose (TID) on the static random access memory (SRAM) is conducted on the 60Co radioactive source in the China Institute of Atomic Energy. The study explores the influence of the device process size, dose rate, temperature and total dose on TID. The results indicated that within a certain range, the dose rate had little influence on the TID of the device. The larger the characteristic size of the device, the greater TID effect, while the higher temperature, the weaker the total dose effect. In addition, the typical dose rate and the uniformity of the source are achieved. The research of the paper provide an insight into radiation hardening, particularly in the aerospace and the nuclear industries.
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Fuqiang ZHANG, Qiming CHEN, Yihao GONG, Shuyan XIAO, Zheng ZHANG, Xu MA, Shuyong ZHAO, Hongchao ZHENG, Jianpeng ZHANG, Gang GUO. Impact of different parameters on the static random access memory under the total ionizing dose[J]. Journal of Radiation Research and Radiation Processing, 2023, 41(6): 060703
Category: Research Articles
Received: Nov. 8, 2022
Accepted: Feb. 12, 2023
Published Online: Jan. 3, 2024
The Author Email: GUO Gang (郭刚)