[1] K S NOVOSELOV, A K GEIM, S V MOROZOV et al. Electric field effect in atomically thin carbon films. Science, 306, 666-669(2004).

[2] H ZHANG. Ultrathin two-dimensional nanomaterials. ACS Nano, 9, 9451-9469(2015).

[3] I FRANK, D M TANENBAUM, A M VAN DER ZANDE et al. Mechanical properties of suspended graphene sheets. Journal of Vacuum Science, 25, 2558-2561(2007).

[4] K LIU, J WU. Mechanical properties of two-dimensional materials and heterostructures. Journal of Materials Research, 31, 832-844(2016).

[5] M CHHOWALLA, H S SHIN, G EDA et al. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets. Nature Chemistry, 5, 263-275(2013).

[6] Q H WANG, K KALANTAR-ZADEH, A KIS et al. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nature Nanotechnology, 7, 699-712(2012).

[7] S Z BUTLER, S M HOLLEN, L CAO et al. Progress, challenges, and opportunities in two-dimensional materials beyond graphene. ACS Nano, 7, 2898-2926(2013).

[9] J H CHEN, W G CULLEN, C JANG et al. Defect scattering in graphene. Physical Review Letters, 102, 236805(2009).

[10] Q WANG, W MAO, D GE et al. Effects of Ga ion-beam irradiation on monolayer graphene. Applied Physics Letters, 103, 073501(2013).

[11] P D KAUSHIK, M RODNER, G LAKSHMI et al. Surface functionalization of epitaxial graphene using ion implantation for sensing and optical applications. Carbon, 157, 169-184(2020).

[12] K HAREESH, R P JOSHI, B SHATEESH et al. Reduction of graphene oxide by 100 MeV Au ion irradiation and its application as H2O2 sensor. Journal of Physics D: Applied Physics, 48, 365105(2015).

[13] X FU, Z QIAO, H ZHOU et al. Defect engineering in transition metal dichalcogenide-based gas sensors. Chemosensors, 12, 85(2024).

[14] F PEYSKENS, C CHAKRABORTY, M MUNEEB et al. Integration of single photon emitters in 2D layered materials with a silicon nitride photonic chip. Nature Communications, 10, 4435(2019).

[15] H TAO, S XU, J ZHANG et al. Improved crystal quality and enhanced optical performance of GaN enabled by ion implantation induced high-quality nucleation. Optics Express, 31, 20850(2023).

[16] L SKOPINSKI, S KRETSCHMER, P ERNST et al. Velocity distributions of particles sputtered from supported two-dimensional MoS 2 during highly charged ion irradiation. Physical Review B, 107, 075418(2023).

[17] D IVEKOVIĆ, K T LUKETIĆ, H VÁZQUEZ et al. Suspended nanoporous graphene produced by swift heavy ion bombardment. Materials Chemistry Physics, 313, 128729(2024).

[18] D D XU, A F VONG, D LEBEDEV et al. Conversion of classical light emission from a nanoparticle‐strained wse2 monolayer into quantum light emission via electron beam irradiation. Advanced Materials, 35, 2208066(2023).

[19] L SUN, F BANHART, J WARNER. Two-dimensional materials under electron irradiation. MRS Bulletin, 40, 29-37(2015).

[20] X WU, X LUO, H CHENG et al. Recent progresses on ion beam irradiation induced structure and performance modulation of two-dimensional materials. Nanoscale, 15, 8925-8947(2023).

[21] M GHORBANI-ASL, S KRETSCHMER, A V KRASHENINNIKOV. Two-dimensional materials under ion irradiation: from defect production to structure and property engineering, 259-301(2022).

[22] V GEORGAKILAS, M OTYEPKA, A B BOURLINOS et al. Functionalization of graphene: covalent and non-covalent approaches, derivatives and applications. Chemical Reviews, 112, 6156-6214(2012).

[23] J LIU, J TANG, J J GOODING. Strategies for chemical modification of graphene and applications of chemically modified graphene. Journal of Materials Chemistry, 22, 12435-12452(2012).

[24] C N R RAO, K GOPALAKRISHNAN, A GOVINDARAJ. Synthesis, properties and applications of graphene doped with boron, nitrogen and other elements. Nano Today, 9, 324-343(2014).

[25] C R RYDER, J D WOOD, S A WELLS et al. Chemically tailoring semiconducting two-dimensional transition metal dichalcogenides and black phosphorus. ACS Nano, 10, 3900-3917(2016).

[26] T GOKUS, R NAIR, A BONETTI et al. Making graphene luminescent by oxygen plasma treatment. ACS Nano, 3, 3963-3968(2009).

[27] Y C LIN, C Y LIN, P W CHIU. Controllable graphene N-doping with ammonia plasma. Applied Physics Letters, 96, 133110(2010).

[28] A NOURBAKHSH, M CANTORO, T VOSCH et al. Bandgap opening in oxygen plasma-treated graphene. Nanotechnology, 21, 435203(2010).

[29] A DEY, A CHRONEOS, N S J BRAITHWAITE et al. Plasma engineering of graphene. Applied Physics Reviews, 3, 21301(2016).

[30] J LU, H LIU, E S TOK et al. Interactions between lasers and two-dimensional transition metal dichalcogenides. Chemical Society Reviews, 45, 2494-2515(2016).

[31] J H YOO, E KIM, D J HWANG. Femtosecond laser patterning, synthesis, defect formation, and structural modification of atomic layered materials. MRS Bulletin, 41, 1002-1008(2016).

[32] Y XIAO, M ZHOU, M ZENG et al. Atomic‐scale structural modification of 2D materials. Advanced Science, 6, 1801501(2019).

[33] N KHOSSOSSI, D SINGH, A AINANE et al. Recent progress of defect chemistry on 2D materials for advanced battery anodes. Chemistry-An Asian Journal, 15, 3390-3404(2020).

[34] S WANG, A ROBERTSON, J H WARNER. Atomic structure of defects and dopants in 2D layered transition metal dichalcogenides. Chemical Society Reviews, 47, 6764-6794(2018).

[35] D RHODES, S H CHAE, R RIBEIRO-PALAU et al. Disorder in van der Waals heterostructures of 2D materials. Nature materials, 18, 541-549(2019).

[36] H NAN, Z WANG, W WANG et al. Strong photoluminescence enhancement of MoS2 through defect engineering and oxygen bonding. ACS Nano, 8, 5738-5745(2014).

[37] J C MEYER, F EDER, S KURASCH et al. Accurate measurement of electron beam induced displacement cross sections for single-layer graphene. Physical Review Letters, 108, 196102(2012).

[38] C T PAN, J HINKS, Q M RAMASSE et al. In-situ observation and atomic resolution imaging of the ion irradiation induced amorphisation of graphene. Scientific Reports, 4, 6334(2014).

[39] M X HAN, Z Y JI, L W SHANG et al. γ radiation caused graphene defects and increased carrier density. Chinese Physics B, 20, 086102(2011).

[40] S LU, F LIAO, T WANG et al. Tuning surface properties of graphene oxide quantum dots by gamma-ray irradiation. Journal of Luminescence, 175, 88-93(2016).

[41] X ZHEN, Y HUANG, S YANG et al. The effect of 500 keV proton irradiation on reduced graphene oxide paper. Materials Letters, 260, 126880(2020).

[42] X ZHEN, Y HUANG, S YANG et al. The effect of proton irradiation on the properties of a graphene oxide paper. RSC Advances, 9, 30519-30525(2019).

[44] Y LIN, K SUENAGA, T BJÖRKMAN et al. Three-fold rotational defects in two-dimensional transition metal dichalcogenides. Nature Communications, 6, 6736(2015).

[45] P K CHOW, R B JACOBS-GEDRIM, J GAO et al. Defect-induced photoluminescence in monolayer semiconducting transition metal dichalcogenides. ACS Nano, 9, 1520-1527(2015).

[46] Z HE, R ZHAO, X CHEN et al. Defect engineering in single-layer MoS2 using heavy ion irradiation. ACS Applied Materials, 10, 42524-42533(2018).

[47] X WU, X ZHENG, G ZHANG et al. γ-Ray irradiation-induced unprecedent optical, frictional and electrostatic performances on CVD-prepared monolayer WSe2. RSC Advances, 11, 22088-22094(2021).

[48] B FORAN, C MANN, M PETERSON et al. Effects of proton radiation-induced defects on optoelectronic properties of MoS2. IEEE Transactions on Nuclear Science, 66, 413-419(2018).

[49] G XIONG, H ZHU, L WANG et al. Radiation damage and abnormal photoluminescence enhancement of multilayer MoS2 under neutron irradiation. Journal of Physics: Condensed Matter, 34, 055701(2021).

[50] A K DASH, H SWAMINATHAN, E BERGER et al. Evidence of defect formation in monolayer MoS2 at ultralow accelerating voltage electron irradiation. 2D Materials, 10, 035002(2023).

[51] F ZHANG, Y LU, D S SCHULMAN et al. Carbon doping of WS2 monolayers: Bandgap reduction and p-type doping transport. Science Advances, 5, eaav5003(2019).

[52] C H DU XIANG, J WU, S ZHONG et al. Surface transfer doping induced effective modulation on ambipolar characteristics of few-layer black phosphorus. Nature Communications, 6, 6485(2015).

[53] Y GONG, H YUAN, C L WU et al. Spatially controlled doping of two-dimensional SnS2 through intercalation for electronics. Nature Nanotechnology, 13, 294-299(2018).

[54] E RIMINI. Ion implantation: basics to device fabrication. Springer Science & Business Media(1994).

[55] R JONES, K YU, S LI et al. Evidence for p-type doping of InN. Physical Review Letters, 96, 125505(2006).

[56] C RONNING, C BORSCHEL, S GEBURT et al. Ion beam doping of semiconductor nanowires. Materials Science Engineering: R: Reports, 70, 30-43(2010).

[57] H GUPTA, J SINGH, R DUTT et al. Defect-induced photoluminescence from gallium-doped zinc oxide thin films: influence of doping and energetic ion irradiation. Physical Chemistry Chemical Physics, 21, 15019-15029(2019).

[58] U BANGERT, A BLELOCH, M GASS et al. Doping of few-layered graphene and carbon nanotubes using ion implantation. Physical Review B—Condensed Matter Materials Physics, 81, 245423(2010).

[59] U BANGERT, W PIERCE, D KEPAPTSOGLOU et al. Ion implantation of graphene toward ic compatible technologies. Nano Letters, 13, 4902-4907(2013).

[60] P WILLKE, J A AMANI, A SINTERHAUF et al. Doping of graphene by low-energy ion beam implantation: structural, electronic, and transport properties. Nano Letters, 15, 5110-5115(2015).

[61] X WU, H ZHAO, D YAN et al. Doping of graphene using ion beam irradiation and the atomic mechanism. Computational Materials Science, 129, 184-193(2017).

[62] S W HAN, W S YUN, H KIM et al. Hole doping effect of MoS2 via electron capture of He+ ion irradiation. Scientific Reports, 11, 23590(2021).

[63] H LIANG, Y ZHENG, L LOH et al. Robust n-type doping of WSe2 enabled by controllable proton irradiation. Nano Research, 16, 1220-1227(2023).

[64] Z SHANG, Y TAN, S ZHOU et al. Layer-to-layer compression and enhanced optical properties of few-layer graphene nanosheet induced by ion irradiation. Optical Engineering, 55, 081303(2016).

[65] M YASEIN, M EISSA, M EL-FAYOUMI et al. Studying the effect of low doses of gamma and beta irradiations on graphene oxide samples. Radiation Physics Chemistry, 173, 108941(2020).

[66] M EISSA, W MEL ROUBY. Effect of alpha particle irradiations on the structural properties of graphene oxide. International Journal of Modern Physics B, 32, 1850343(2018).

[67] D WANG, Y WANG, X CHEN et al. Layer-by-layer thinning of two-dimensional MoS2 films by using a focused ion beam. Nanoscale, 8, 4107-4112(2016).

[68] O OCHEDOWSKI, H BUKOWSKA, V M F SOLER et al. Folding two dimensional crystals by swift heavy ion irradiation. Nuclear Instruments, 340, 39-43(2014).

[69] L MADAUSS, O OCHEDOWSKI, H LEBIUS et al. Defect engineering of single-and few-layer MoS2 by swift heavy ion irradiation. 2D Materials, 4, 015034(2016).

[70] C HERBIG, E H ÅHLGREN, U A SCHRÖDER et al. Xe irradiation of graphene on Ir (111): From trapping to blistering. Physical Review B, 92, 085429(2015).

[71] M PANDEY, R AHUJA, R KUMAR. Electron beam irradiation-induced atomically thin domes of two-dimensional materials: Graphene and MoS2. Surfaces Interfaces, 51, 104654(2024).

[72] S O WOO, W TEIZER. Effects of electron beam induced redox processes on the electronic transport in graphene field effect transistors. Carbon, 93, 693-701(2015).

[73] O OCHEDOWSKI, K MARINOV, G WILBS et al. Radiation hardness of graphene and MoS2 field effect devices against swift heavy ion irradiation. Journal of Applied Physics, 113, 214306(2013).

[74] S KUMAR, A KUMAR, A TRIPATHI et al. Engineering of electronic properties of single layer graphene by swift heavy ion irradiation. Journal of Applied Physics, 123, 161533(2018).

[75] J ZENG, J LIU, S ZHANG et al. Graphene electrical properties modulated by swift heavy ion irradiation. Carbon, 154, 244-253(2019).

[76] A RATAN, S KUNCHAKARA, M DUTT et al. Enhanced electrical properties of few layers MoS2-PVA nanocomposite film via homogeneous dispersion and annealing effect induced by 80áMeV Carbon6+ swift heavy ion irradiation. Materials Science in Semiconductor Processing, 108, 104877(2020).

[77] B TANG, Y ZHAO, C ZHOU et al. Threshold voltage modulation in monolayer MoS2 field-effect transistors via selective gallium ion beam irradiation. Science China Materials, 65, 741-747(2022).

[78] M G STANFORD, P R PUDASAINI, A BELIANINOV et al. Focused helium-ion beam irradiation effects on electrical transport properties of few-layer WSe2: enabling nanoscale direct write homo-junctions. Scientific Reports, 6, 27276(2016).

[79] Y LIU, Z GAO, Y TAN et al. Enhancement of out-of-plane charge transport in a vertically stacked two-dimensional heterostructure using point defects. ACS Nano, 12, 10529-10536(2018).

[80] Y LIU, Y LIU, H ZHOU et al. Defect engineering of out-of-plane charge transport in van der Waals heterostructures for Bi-direction photoresponse. ACS Nano, 15, 16572-16580(2021).

[81] Z GUO, Y ZENG, F MENG et al. In-situ neutron-transmutation for substitutional doping in 2D layered indium selenide based phototransistor. eLight, 2, 9(2022).

[82] T Y KIM, K CHO, W PARK et al. Irradiation effects of high-energy proton beams on MoS2 field effect transistors. ACS Nano, 8, 2774-2781(2014).

[83] D S FOX, Y ZHOU, P MAGUIRE et al. Nanopatterning and electrical tuning of MoS2 layers with a subnanometer helium ion beam. Nano Letters, 15, 5307-5313(2015).

[84] A MACKOVÁ, P MALINSKY, A JAGEROVÁ et al. Modification of MoS2 structure by means of high energy ions in connection to electrical properties and light element surface adsorption. Surfaces Interfaces, 17, 100357(2019).

[85] A J ARNOLD, T SHI, I JOVANOVIC et al. Extraordinary radiation hardness of atomically thin MoS2. ACS Applied Materials Interfaces, 11, 8391-8399(2019).

[86] Y ZHANG, X CHEN, H WANG et al. Electronic properties of multilayer MoS2 field effect transistor with unique irradiation resistance. The Journal of Physical Chemistry C, 125, 2089-2096(2021).

[87] K BURNS, A M Z TAN, A GABRIEL et al. Controlling neutral and charged excitons in MoS2 with defects. Journal of Materials Research, 35, 949-957(2020).

[88] D GUPTA, V CHAUHAN, S UPADHYAY et al. Defects engineering and enhancement in optical and structural properties of 2D-MoS2 thin films by high energy ion beam irradiation. Materials Chemistry Physics, 276, 125422(2022).

[89] V CHAUHAN, T GUPTA, N KORATKAR et al. Studies of the electronic excitation modifications induced by SHI of Au ions in RF sputtered ZrO2 thin films. Materials Science in Semiconductor Processing, 88, 262-272(2018).

[90] R CHEN, G LIU, F QIU et al. Self-powered waveguide-integrated photodetector based on a defect-engineered WSe2/graphene heterojunction. Optical Materials Express, 12, 3614-3620(2022).

[91] D H LIEN, S Z UDDIN, M YEH et al. Electrical suppression of all nonradiative recombination pathways in monolayer semiconductors. Science, 364, 468-471(2019).

[92] R DHALL, K SEYLER, Z LI et al. Strong circularly polarized photoluminescence from multilayer MoS2 through plasma driven direct-gap transition. ACS Photonics, 3, 310-314(2016).

[93] J F FELIX, A FDA SILVA, D A SILVA S W et al. A comprehensive study on the effects of gamma radiation on the physical properties of a two-dimensional WS2 monolayer semiconductor. Nanoscale Horizons, 5, 259-267(2020).

[94] Z WU, Z NI. Spectroscopic investigation of defects in two-dimensional materials. Nanophotonics, 6, 1219-1237(2017).

[95] S ZHANG, H M HILL, K MOUDGIL et al. Controllable, wide‐ranging n‐doping and p‐doping of monolayer group 6 transition‐metal disulfides and diselenides. Advanced Materials, 30, 1802991(2018).

[96] F SARCAN, N J FAIRBAIRN, P ZOTEV et al. Understanding the impact of heavy ions and tailoring the optical properties of large-area monolayer WS2 using focused ion beam. npj 2D Materials Applications, 7, 23(2023).

[97] I SHLIMAK, E ZION, A BUTENKO et al. Hopping magnetoresistance in ion irradiated monolayer graphene. Physica E: Low-dimensional Systems Nanostructures, 76, 158-163(2016).

[98] A K ANBALAGAN, F C HU, W K CHAN et al. Gamma-ray irradiation induced ultrahigh room-temperature ferromagnetism in MoS2 sputtered few-layered thin films. ACS Nano, 17, 6555-6564(2023).

[99] G LÓPEZ-POLÍN, C GÓMEZ-NAVARRO, V PARENTE et al. Increasing the elastic modulus of graphene by controlled defect creation. Nature Physics, 11, 26-31(2015).

[100] Z SONG, Z XU. Geometrical effect ‘stiffens’ graphene membrane at finite vacancy concentrations. Extreme Mechanics Letters, 6, 82-87(2016).

[101] M ANNAMALAI, S MATHEW, T K CHAN et al. Tailoring mechanical properties of suspended graphene by energetic ion beams(2018).

[102] K LIU, C L HSIN, D FU et al. Self-passivation of defects: effects of high-energy particle irradiation on the elastic modulus of multilayer graphene. Advanced Materials, 27, 6841-6847(2015).

[103] X WU, X ZHU, B LEI. Impact of ion beam irradiation on two-dimensional MoS2: A molecular dynamics simulation study. Journal of Physics: Condensed Matter, 34, 055402(2021).

[104] V TUBOLTSEV, J RÄISÄNEN. Sculpturing nanowires with ion beams. Small, 5, 2687-2691(2009).

[105] J BARDEEN, W SHOCKLEY. Deformation potentials and mobilities in non-polar crystals. Physical Review, 80, 72(1950).

[106] X LIU, A K SACHAN, S T HOWELL et al. Thermomechanical nanostraining of two-dimensional materials. Nano Letters, 20, 8250-8257(2020).

[107] S DU, Y GUO, X HUANG et al. Strain lithography for two-dimensional materials by electron irradiation. Applied Physics Letters, 120, 093104(2022).

[108] F XIA, T MUELLER, Y LIN. m, Valdes-Garcia, A. & Avouris, P. Ultrafast graphene photodetector. Nature Nanotechnology, 4, 839-843(2009).

[109] T MUELLER, F XIA, P AVOURIS. Graphene photodetectors for high-speed optical communications. Nature Photonics, 4, 297-301(2010).

[110] Y TAN, Z GUO, Z SHANG et al. Tailoring nonlinear optical properties of Bi2Se3 through ion irradiation. Scientific Reports, 6, 21799(2016).

[111] H LI, C LIU, Y ZHANG et al. Effects of N‐ion implantation on the electrical and photoelectronic properties of MoS2 field effect transistors. Physica Status Solidi, 219, 2100551(2022).

[112] O C COMPTON, S T NGUYEN. Graphene oxide, highly reduced graphene oxide, and graphene: versatile building blocks for carbon‐based materials. Small, 6, 711-723(2010).

[113] F SINGH, R N GOYAL. Structural and electrochemical characterization of carbon ion beam irradiated reduced graphene oxide and its application in voltammetric determination of norepinephrine. RSC Advances, 5, 87504-87511(2015).

[114] S CHEN, C WANG, H CAI et al. Realization of single-photon emitters with high brightness and high stability and excellent monochromaticity. Matter, 7, 1106-1116(2024).

[115] J KLEIN, M LORKE, M FLORIAN et al. Site-selectively generated photon emitters in monolayer MoS2 via local helium ion irradiation. Nature Communications, 10, 2755(2019).