Graded Multilayer Film Design Method of Anamorphic Magnification Extreme Ultraviolet Lithography Objective System

Mo Liu; Yanqiu Li

doi:10.3788/AOS202040.0522001

Acta Optica Sinica, Volume. 40, Issue 5, 0522001(2020)

Graded Multilayer Film Design Method of Anamorphic Magnification Extreme Ultraviolet Lithography Objective System

Mo Liu and Yanqiu Li^*

Key Laboratory of Photoelectronic Imaging Technology and System, Ministry of Education, School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China

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Figures & Tables(13)

Fig. 1. Thickness distribution of multilayer films. (a) Regular multilayer films; (b) laterally graded multilayer films

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Fig. 2. Mo/Si regular film reflectivity versus incident angle^[4]

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Fig. 3. Optical path of anamorphic magnification EUV lithography objective system in yz plane when M_H=4 and M_L=8

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Fig. 4. Image field and field points F₁--F₉

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Fig. 5. Flow chart of progressive optimization design for graded multilayer films

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Fig. 6. Reflectivity distribution of M1, M2, M3, and M5 mirrors when single mirror is added with progressively optimized laterally graded multilayer films, and remaining mirrors are all bare mirrors (assuming ideal reflection).(a) M1; (b) M2; (c) M3; (d) M5

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Fig. 7. Reflectivity distribution and wavefront aberration distribution of film-containing objective system in final multilayer film design scheme. (a) F₂, reflectivity; (b) F₉, reflectivity; (c) F₂, wavefront aberration; (d) F₉, wavefront aberration

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Table 1. Performance indexes of anamorphic magnification EUV lithography objective system after optimization
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Table 1. Performance indexes of anamorphic magnification EUV lithography objective system after optimization
Parameter Specification
Wavefront aberration/λ 0.05670
Wavelength /nm 13.5
Field of view /(mm×mm) 26×1
M_H 4
M_L 8
NA 0.6
Range of incident angle <6°

Table 2. Range of incident angle and average incident angle of anamorphic magnification EUV lithography objective system with NA=0.6

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Table 2. Range of incident angle and average incident angle of anamorphic magnification EUV lithography objective system with NA=0.6

Mirror	Diameter /mm	Incident angle range /(°)	Average incident angle /(°)
M1	483.29	11.56--19.46	15.94
M2	229.61	20.58--35.11	27.38
M3	65.77	9.34--19.08	13.76
M4	252.32	4.32--7.18	5.30
M5	288.56	1.36--17.92	10.71
M6	700.88	0.60--6.13	3.85

Table 3. Minimum reflectivity distribution of M1--M6 mirrors

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Table 3. Minimum reflectivity distribution of M1--M6 mirrors

Mirror	Minimum reflectivity /%
Mirror	Optimized M1,M2,M3,M5 with laterally graded multilayer films	Optimized M1,M2,M3,M5 with progressively optimized graded multilayer films
M1	70.44	70.50
M2	46.53	47.18
M3	67.31	71.89
M4	72.31	72.31
M5	71.62	71.89
M6	71.48	71.48

Table 4. Laterally graded multilayer film parameters of mirrors M1, M2, M3, M5
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Table 4. Laterally graded multilayer film parameters of mirrors M1, M2, M3, M5
Mirror C₀ C₂ Y₀
M1 1.010 5.964×10^-7 -32.15
M2 1.068 8.549×10^-6 -10.20
M3 1.201 -1.299×10^-6 -355.30
M5 0.987 2.148×10^-6 -16.98

Table 5. Gradient variation parameters of laterally graded multilayer films with progressive optimization design
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Table 5. Gradient variation parameters of laterally graded multilayer films with progressive optimization design
Mirror C₀ C₂ Y₀
M1M2M3M5 1.01017001.06762301.19206150.9824070 5.964×10^-78.549×10^-7-1.299×10^-72.148×10^-7 -32.15-10.20-355.30-16.98

Table 6. Wavefront aberrations and Strehl of bare mirror system and film-containing objective system at center and edge field points
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Table 6. Wavefront aberrations and Strehl of bare mirror system and film-containing objective system at center and edge field points
Field point Condition Wavefront aberration/λ Strehl
F₂ System without coating 0.0307 0.964
System with coating 0.0598 0.868
F₉ System without coating 0.0559 0.884
System with coating 0.0872 0.741

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Mo Liu, Yanqiu Li. Graded Multilayer Film Design Method of Anamorphic Magnification Extreme Ultraviolet Lithography Objective System[J]. Acta Optica Sinica, 2020, 40(5): 0522001

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Paper Information

Category: Optical Design and Fabrication

Received: Sep. 19, 2019

Accepted: Nov. 26, 2019

Published Online: Mar. 10, 2020

The Author Email: Li Yanqiu (liyanqiu@bit.edu.cn)

DOI:10.3788/AOS202040.0522001

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology

Table 1. Performance indexes of anamorphic magnification EUV lithography objective system after optimization

Table 1. Performance indexes of anamorphic magnification EUV lithography objective system after optimization

Table 2. Range of incident angle and average incident angle of anamorphic magnification EUV lithography objective system with NA=0.6

Table 2. Range of incident angle and average incident angle of anamorphic magnification EUV lithography objective system with NA=0.6

Table 3. Minimum reflectivity distribution of M1--M6 mirrors

Table 3. Minimum reflectivity distribution of M1--M6 mirrors

Table 4. Laterally graded multilayer film parameters of mirrors M1, M2, M3, M5

Table 4. Laterally graded multilayer film parameters of mirrors M1, M2, M3, M5

Table 5. Gradient variation parameters of laterally graded multilayer films with progressive optimization design

Table 5. Gradient variation parameters of laterally graded multilayer films with progressive optimization design

Table 6. Wavefront aberrations and Strehl of bare mirror system and film-containing objective system at center and edge field points

Table 6. Wavefront aberrations and Strehl of bare mirror system and film-containing objective system at center and edge field points