Semiconductor Optoelectronics, Volume. 44, Issue 1, 81(2023)
Simulation of Precursor Distribution in Chamber During Atomic Layer Deposition
[1] [1] Yan L, Lopez C M, Shrestha R P, et al. Magnesium oxide as a candidate high-κ gate dielectric[J]. Appl. Phys. Lett., 2006, 88(14): 142901.
[2] [2] Maclean S G, Duley W W. Photoluminescence from surface states in MgO and CaO powders[J]. J. of Physics & Chemistry of Solids, 1984, 45(2): 227-235.
[3] [3] Boo J H, Yu K S, Koh W, et al. Preparation of MgO films on GaAs by metalorganic chemical vapor deposition[J]. Materials Lett., 1996, 26(4/5): 233-236.
[4] [4] Kohn A, Kovacs A, Uhrmann T, et al. Structural and electrical characterization of SiO2/MgO (001) barriers on Si for a magnetic transistor[J]. Appl. Phys. Lett., 2009, 95(4): 042506-1-042506-3.
[5] [5] Yi W, Yu S, Lee W, et al. Secondary electron emission yields from MgO deposited on carbon nanotubes[J]. J. of Appl. Phys., 2001, 89(7): 4091-4095.
[6] [6] Lee J, Jeong T, Yu S G, et al. Thickness effect on secondary electron emission of MgO layers[J]. Appl. Surface Science, 2001, 174(1): 62-69.
[9] [9] Aboelfotoh M O, Park K C, Pliskin W A. Infrared and high-energy electron diffraction analyses of electron-beam-evaporated MgO films[J]. J. of Appl. Phys., 1977, 48(7): 2910-2917.
[10] [10] Yoon J G, Kim K. Growth of (111) oriented MgO film on Si substrate by the sol-gel method[J]. Appl. Phys. Lett., 1995, 66(20): 2661-2663.
[11] [11] Yadavalli S, Yang M H, Flynn C P. Low-temperature growth of MgO by molecular-beam epitaxy[J]. Phys. Rev. B: Condensed Matter, 1990, 41(11): 7961.
[12] [12] Cao W, Wang B, Yang Y, et al. Secondary electron emission characteristics of the Al2O3/MgO double-layer structure prepared by atomic layer deposition[J]. Ceramics International, 2020, 47(7): 9866-9872.
[13] [13] Lopez J, Mrquez H, Borbón-Nuez H, et al. Non-quarter-wave dielectric mirror prepared by thermal atomic layer deposition[J]. Optics & Laser Technol., 2020, 127: 106143.
[14] [14] Juppo M, Rahtu A, Ritala M. In situ mass spectrometry study on surface reactions in atomic layer deposition of TiN and Ti(Al)N thin films[J]. Chemistry of Materials, 2015, 14(1): 281-287.
[15] [15] Leskel/U00E4 M, Ritala M. ALD precursor chemistry: Evolution and future challenges[J]. J. de Physique Archives, 1999: 837-852.
[18] [18] Xiong S, Jia X, Mi K, et al. Upgrading polytetrafluoroethylene hollow-fiber membranes by CFD-optimized atomic layer deposition[J]. J. of Membrane Science, 2020, 617: 118610.
[20] [20] Putkonen M, Niinisto L, Sajavaara T. Enhanced growth rate in atomic layer epitaxy deposition of magnesium oxide thin films[J]. J. of Materials Chemistry, 2000, 10(8): 1857-1861.
Get Citation
Copy Citation Text
LEI Xinghang, WANG Guozheng, YANG Jikai. Simulation of Precursor Distribution in Chamber During Atomic Layer Deposition[J]. Semiconductor Optoelectronics, 2023, 44(1): 81
Category:
Received: Nov. 7, 2022
Accepted: --
Published Online: Apr. 7, 2023
The Author Email: Guozheng WANG (Wguozheng@163.com)