Journal of Semiconductors, Volume. 44, Issue 11, 114102(2023)

Study of the influence of virtual guard ring width on the performance of SPAD detectors in 180 nm standard CMOS technology

Danlu Liu1, Ming Li1, Tang Xu1, Jie Dong1, Yuming Fang1,2, and Yue Xu1,2、*
Author Affiliations
  • 1College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
  • 2National and Local Joint Engineering Laboratory of RF Integration & Micro-Assembly Technology, Nanjing 210023, China
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    Danlu Liu, Ming Li, Tang Xu, Jie Dong, Yuming Fang, Yue Xu. Study of the influence of virtual guard ring width on the performance of SPAD detectors in 180 nm standard CMOS technology[J]. Journal of Semiconductors, 2023, 44(11): 114102

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    Paper Information

    Category: Articles

    Received: Mar. 31, 2022

    Accepted: --

    Published Online: Jan. 3, 2024

    The Author Email: Xu Yue (YXu)

    DOI:10.1088/1674-4926/44/11/114102

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