Hybrid bonding of GaAs and Si wafers at low temperature by Ar plasma activation

Rui Huang; Zhiyong Wang; Kai Wu; Hao Xu; Qing Wang; Yecai Guo

doi:10.1088/1674-4926/45/4/042701

Journal of Semiconductors, Volume. 45, Issue 4, 042701(2024)

Hybrid bonding of GaAs and Si wafers at low temperature by Ar plasma activation

Rui Huang^1、*, Zhiyong Wang², Kai Wu¹, Hao Xu¹, Qing Wang¹, and Yecai Guo¹

Author Affiliations

¹School of Electronic and Information Engineering, Wuxi University, Wuxi 214105, China

²Institute of Advanced Technology on Semiconductor Optics & Electronics, Institute of Laser Engineering, Beijing University of Technology, Beijing 100124, China

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References(19)

[1] A H Atabaki, S Moazeni, F Pavanello et al. Integrating photonics with silicon nanoelectronics for the next generation of systems on a chip. Nature, 556, 349(2018).

[2] Y Lu, A Alvarez, C H Kao et al. An electronic silicon-based memristor with a high switching uniformity. Nat Electron, 2, 66(2019).

[3] K Yoshikawa, H Kawasaki, W Yoshida et al. Silicon heterojunction solar cell with interdigitated back contacts for a photoconversion efficiency over 26%. Nat Energy, 2, 17032(2017).

[4] M Morimoto, S Nishida, N Shigekawa et al. Surface-activating-bonding-based low-resistance Si/III-V junctions. Electron Lett, 49, 830(2013).

[5] T N Theis, H S P Wong. The end of Moore’s law: A new beginning for information technology. Comput Sci Eng, 19, 41(2017).

[6] Y Y Huang, L Y Zhang, R Y Jing et al. Superior piezoelectric performance with high operating temperature in bismuth ferrite-based ternary ceramics. J Mater Sci Technol, 169, 172(2024).

[7] R X Su, S L Fu, Z T Lu et al. Over GHz bandwidth SAW filter based on 32° Y-X LN/SiO2/poly-Si/Si heterostructure with multilayer electrode modulation. Appl Phys Lett, 120, 253501(2022).

[8] C Bai, M Kim. Single power-conversion active-clamped AC/DC converter employing Si/SiC hybrid switch. IEEE Trans Ind Electron, 71, 1616(2024).

[10] T Lin, J N Xie, S H Ning et al. Study on the p-type ohmic contact in GaAs-based laser diode. Mater Sci Semicond Process, 124, 105622(2021).

[11] J H Yu, M K Xu, L Y Liang et al. Separative extended-gate AlGaAs/GaAs HEMT biosensors based on capacitance change strategy. Appl Phys Lett, 116, 123704(2020).

[12] S Kim, D M Geum, M S Park et al. Fabrication of high-quality GaAs-based photodetector arrays on Si. Appl Phys Lett, 110, 153505(2017).

[13] P C Schindler, D Korn, C Stamatiadis et al. Monolithic GaAs electro-optic IQ modulator demonstrated at 150 gbit/s with 64QAM. J Light Technol, 32, 760(2014).

[14] N Shigekawa, R Kozono, S Yoon et al. Effects of post bonding annealing on GaAs//Si bonding interfaces and its application for sacrificial-layer-etching based multijunction solar cells. Sol Energy Mater Sol Cells, 210, 110501(2020).

[15] C W Cheng, K T Shiu, N Li et al. Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics. Nat Commun, 4, 1577(2013).

[16] Y Ohno, J B Liang, N Shigekawa et al. Chemical bonding at room temperature via surface activation to fabricate low-resistance GaAs/Si heterointerfaces. Appl Surf Sci, 525, 146610(2020).

[17] S Yamajo, S Yoon, J B Liang et al. Hard X-ray photoelectron spectroscopy investigation of annealing effects on buried oxide in GaAs/Si junctions by surface-activated bonding. Appl Surf Sci, 473, 627(2019).

[18] Y J Shen, Y Z Wang, Y Yang et al. Influence of surface roughness and hydrophilicity on bonding strength of concrete-rock interface. Constr Build Mater, 213, 156(2019).

[19] G R He, G H Yang, W H Zheng et al. Analysis of Si/GaAs Bonding Stresses with the Finite Element Method. J Semicond, 27, 11(2006).

[20] Y Q Zhao, W Liu, Y D Bao et al. Plasma-activated GaAs/Si wafer bonding with high mechanical strength and electrical conductivity. Mater Sci Semicond Process, 143, 106481(2022).

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Rui Huang, Zhiyong Wang, Kai Wu, Hao Xu, Qing Wang, Yecai Guo. Hybrid bonding of GaAs and Si wafers at low temperature by Ar plasma activation[J]. Journal of Semiconductors, 2024, 45(4): 042701

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Paper Information

Category: Articles

Received: Sep. 29, 2023

Accepted: --

Published Online: Jun. 21, 2024

The Author Email: Huang Rui (RHuang)

DOI:10.1088/1674-4926/45/4/042701

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology