Researching | Embedded high-quality ternary GaAs1−xSbx quantum dots in GaAs nanowires by molecular-beam epitaxy

Journal of Semiconductors, Volume. 45, Issue 8, 082101(2024)

Embedded high-quality ternary GaAs_1−xSb_x quantum dots in GaAs nanowires by molecular-beam epitaxy

Xiyu Hou^1,2, Lianjun Wen¹, Fengyue He^1,2, Ran Zhuo¹, Lei Liu¹, Hailong Wang^1,2, Qing Zhong¹, Dong Pan^1,2、*, and Jianhua Zhao^1,2、**

Author Affiliations

¹State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

²College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China

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Xiyu Hou, Lianjun Wen, Fengyue He, Ran Zhuo, Lei Liu, Hailong Wang, Qing Zhong, Dong Pan, Jianhua Zhao. Embedded high-quality ternary GaAs_1−xSb_x quantum dots in GaAs nanowires by molecular-beam epitaxy[J]. Journal of Semiconductors, 2024, 45(8): 082101

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Paper Information

Category: Articles

Received: Mar. 31, 2024

Accepted: --

Published Online: Aug. 27, 2024

The Author Email: Pan Dong (pandong@semi.ac.cn), Zhao Jianhua (jhzhao@semi.ac.cn)

DOI:10.1088/1674-4926/24030038

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laser devices and laser physics

Lasers and Laser Optics

laser manufacturing

Instrumentation, Measurement and Metrology