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Photonics Research, Volume. 5, Issue 6, 702(2017)

High-efficiency normal-incidence vertical p-i-n photodetectors on a germanium-on-insulator platform

Yiding Lin1,2,3, Kwang Hong Lee2, Shuyu Bao1,2, Xin Guo1, Hong Wang1, Jurgen Michel2,4, and Chuan Seng Tan1,2、*
Author Affiliations
  • 1School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
  • 2Low Energy Electronic Systems (LEES), Singapore-MIT Alliance for Research and Technology, Singapore 138602, Singapore
  • 3e-mail: liny0075@e.ntu.edu.sg
  • 4Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
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    [1] R. Pillarisetty. Academic and industry research progress in germanium nanodevices. Nature, 479, 324-328(2011).

    [2] C. Sun, M. T. Wade, Y. Lee, J. S. Orcutt, L. Alloatti, M. S. Georgas, A. S. Waterman, J. M. Shainline, R. R. Avizienis, S. Lin, B. R. Moss, R. Kumar, F. Pavanello, A. H. Atabaki, H. M. Cook, A. J. Ou, J. C. Leu, Y.-H. Chen, K. Asanović, R. J. Ram, M. A. Popović, V. M. Stojanović. Single-chip microprocessor that communicates directly using light. Nature, 528, 534-538(2015).

    [3] P. Chaisakul, D. Marris-Morini, J. Frigerio, D. Chrastina, M.-S. Rouifed, S. Cecchi, P. Crozat, G. Isella, L. Vivien. Integrated germanium optical interconnects on silicon substrates. Nat. Photonics, 8, 482-488(2014).

    [4] J. Michel, J. Liu, L. C. Kimerling. High-performance Ge-on-Si photodetectors. Nat. Photonics, 4, 527-534(2010).

    [5] J. Liu, M. Beals, A. Pomerene, S. Bernardis, R. Sun, J. Cheng, L. C. Kimerling, J. Michel. Waveguide-integrated, ultralow-energy GeSi electro-absorption modulators. Nat. Photonics, 2, 433-437(2008).

    [6] R. E. Camacho-Aguilera, Y. Cai, N. Patel, J. T. Bessette, M. Romagnoli, L. C. Kimerling, J. Michel. An electrically pumped germanium laser. Opt. Express, 20, 11316-11320(2012).

    [7] R. Camacho-Aguilera, Z. Han, Y. Cai, L. C. Kimerling, J. Michel. Direct band gap narrowing in highly doped Ge. Appl. Phys. Lett., 102, 152106(2013).

    [8] R. Soref. Group IV photonics: Enabling 2  μm communications. Nat. Photonics, 9, 358-359(2015).

    [9] R. Soref. Mid-infrared photonics in silicon and germanium. Nat. Photonics, 4, 495-497(2010).

    [10] J. Kang, X. Yu, M. Takenaka, S. Takagi. Impact of thermal annealing on Ge-on-Insulator substrate fabricated by wafer bonding. Mater. Sci. Semicond. Process., 42, 259-263(2016).

    [11] V. Reboud, A. Gassenq, J. M. Hartmann, J. Widiez, L. Virot, J. Aubin, K. Guilloy, S. Tardif, J. M. Fédéli, N. Pauc, A. Chelnokov, V. Calvo. Germanium based photonic components toward a full silicon/germanium photonic platform. Prog. Cryst. Growth Charact. Mater., 63, 1-24(2017).

    [12] H. Wu, P. D. Ye. Fully depleted Ge CMOS devices and logic circuits on Si. IEEE Trans. Electron Devices, 63, 3028-3035(2016).

    [13] G. Taraschi, T. A. Langdo, M. T. Currie, E. A. Fitzgerald, D. A. Antoniadis. Relaxed SiGe-on-insulator fabricated via wafer bonding and etch back. J. Vac. Sci. Technol. B, 20, 725-727(2002).

    [14] W. Li, P. Anantha, S. Bao, K. H. Lee, X. Guo, T. Hu, L. Zhang, H. Wang, R. Soref, C. S. Tan. Germanium-on-silicon nitride waveguides for mid-infrared integrated photonics. Appl. Phys. Lett., 109, 241101(2016).

    [15] D. S. Yu, H. L. Kao, A. Chin, S. P. McAlister. Performance and potential of germanium on insulator field-effect transistors. J. Vac. Sci. Technol. A, 24, 690-693(2006).

    [16] Y. Moriyama, K. Ikeda, S. Takeuchi, Y. Kamimuta, Y. Nakamura, K. Izunome, A. Sakai, T. Tezuka. Ultrathin-body Ge-on-insulator wafers fabricated with strongly bonded thin Al2O3/SiO2 hybrid buried oxide layers. Appl. Phys. Express, 7, 086501(2014).

    [17] L. Zhang, A. M. Agarwal, L. C. Kimerling, J. Michel. Nonlinear Group IV photonics based on silicon and germanium: from near-infrared to mid-infrared. Nanophotonics, 3, 247-268(2014).

    [18] J. R. Jain, D.-S. Ly-Gagnon, K. C. Balram, J. S. White, M. L. Brongersma, D. A. B. Miller, R. T. Howe. Tensile-strained germanium-on-insulator substrate fabrication for silicon-compatible optoelectronics. Opt. Mater. Express, 1, 1121-1126(2011).

    [19] K. Tani, S.-I. Saito, Y. Lee, K. Oda, T. Mine, T. Sugawara, T. Ido. Light detection and emission in germanium-on-insulator diodes. Jpn. J. Appl. Phys., 51, 04DG09(2012).

    [20] J. H. Nam, F. Afshinmanesh, D. Nam, W. S. Jung, T. I. Kamins, M. L. Brongersma, K. C. Saraswat. Monolithic integration of germanium-on-insulator p-i-n photodetector on silicon. Opt Express, 23, 15816-15823(2015).

    [21] L. Chen, P. Dong, M. Lipson. High performance germanium photodetectors integrated on submicron silicon waveguides by low temperature wafer bonding. Opt. Express, 16, 11513-11518(2008).

    [22] J. Kang, M. Takenaka, S. Takagi. Novel Ge waveguide platform on Ge-on-insulator wafer for mid-infrared photonic integrated circuits. Opt. Express, 24, 11855-11864(2016).

    [23] A. Gassenq, K. Guilloy, G. Osvaldo Dias, N. Pauc, D. Rouchon, J. M. Hartmann, J. Widiez, S. Tardif, F. Rieutord, J. Escalante, I. Duchemin, Y. M. Niquet, R. Geiger, T. Zabel, H. Sigg, J. Faist, A. Chelnokov, V. Reboud, V. Calvo. 1.9% bi-axial tensile strain in thick germanium suspended membranes fabricated in optical germanium-on-insulator substrates for laser applications. Appl. Phys. Lett., 107, 191904(2015).

    [24] V. Reboud, A. Gassenq, K. Guilloy, G. Osvaldo Dias, J. M. Escalante, S. Tardif, N. Pauc, J. M. Hartmann, J. Widiez, E. Gomez, E. Bellet Amalric, D. Fowler, D. Rouchon, I. Duchemin, Y. M. Niquet, F. Rieutord, J. Faist, R. Geiger, T. Zabel, E. Marin, H. Sigg, A. Chelnokov, V. Calvo. Ultra-high amplified strain on 200  mm optical Germanium-On-Insulator (GeOI) substrates: towards CMOS compatible Ge lasers. Proc. SPIE, 9752, 97520F(2016).

    [25] S. Bao, K. H. Lee, C. Wang, B. Wang, R. I. Made, S. F. Yoon, J. Michel, E. Fitzgerald, C. S. Tan. Germanium-on-insulator virtual substrate for InGaP epitaxy. Mater. Sci. Semicond. Process., 58, 15-21(2017).

    [26] K. H. Lee, S. Bao, G. Y. Chong, Y. H. Tan, E. A. Fitzgerald, C. S. Tan. Fabrication and characterization of germanium-on-insulator through epitaxy, bonding, and layer transfer. J. Appl. Phys., 116, 103506(2014).

    [27] K. H. Lee, S. Bao, Y. Lin, W. Li, P. Anantha, L. Zhang, Y. Wang, J. Michel, E. A. Fitzgerald, C. S. Tan. Hetero-epitaxy of high quality germanium film on silicon substrate for optoelectronic integrated circuit applications. J. Mater. Res., 1-16(2017).

    [28] S. R. Hyun-Yong Yu, W. S. Jung, A. K. Okyay, D. A. B. Miller, K. C. Saraswat. High-efficiency p-i-n photodetectors on selective-area-grown Ge for monolithic integration. IEEE Electron Device Lett., 30, 1161-1163(2009).

    [29] Y. Hoshi, K. Sawano, K. Hamaya, M. Miyao, Y. Shiraki. Formation of tensilely strained germanium-on-insulator. Appl. Phys. Express, 5, 015701(2012).

    [30] K.-W. Ang, J. W. Ng, G.-Q. Lo, D.-L. Kwong. Impact of field-enhanced band-traps-band tunneling on the dark current generation in germanium p-i-n photodetector. Appl. Phys. Lett., 94, 223515(2009).

    [31] Y. Dong, W. Wang, D. Lei, X. Gong, Q. Zhou, S. Y. Lee, W. K. Loke, S.-F. Yoon, E. S. Tok, G. Liang, Y.-C. Yeo. Suppression of dark current in germanium-tin on silicon p-i-n photodiode by a silicon surface passivation technique. Opt. Express, 23, 18611-18619(2015).

    [32] K. H. Lee, S. Bao, G. Y. Chong, Y. H. Tan, E. A. Fitzgerald, C. S. Tan. Defects reduction of Ge epitaxial film in a germanium-on-insulator wafer by annealing in oxygen ambient. APL Mater., 3, 016102(2015).

    [33] L. Colace, M. Balbi, G. Masini, G. Assanto, H.-C. Luan, L. C. Kimerling. Ge on Si p-i-n photodiodes operating at 10Gbit/s. Appl. Phys. Lett., 88, 101111(2006).

    [34] L. Colace, G. Masini, G. Assanto, H.-C. Luan, K. Wada, L. C. Kimerling. Efficient high-speed near-infrared Ge photodetectors integrated on Si substrates. Appl. Phys. Lett., 76, 1231-1233(2000).

    [35] Z. Zhou, J. He, R. Wang, C. Li, J. Yu. Normal incidence p-i–n Ge heterojunction photodiodes on Si substrate grown by ultrahigh vacuum chemical vapor deposition. Opt. Commun., 283, 3404-3407(2010).

    [36] C. Li, C. Xue, Z. Liu, B. Cheng, C. Li, Q. Wang. High-bandwidth and high-responsivity top-illuminated germanium photodiodes for optical interconnection. IEEE Trans. Electron Devices, 60, 1183-1187(2013).

    [37] D. Suh, S. Kim, J. Joo, G. Kim. 36-GHz high-responsivity Ge photodetectors grown by RPCVD. IEEE Photon. Technol. Lett., 21, 672-674(2009).

    [38] C. G. Van de Walle. Band lineups and deformation potentials in the model-solid theory. Phys. Rev. B, 39, 1871-1883(1989).

    [39] S. L. Chuang. Physics of Photonic Devices, 840(2009).

    [40] J. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, D. T. Danielson, S. Jongthammanurak, J. Michel, L. C. Kimerling. Deformation potential constants of biaxially tensile stressed Geepitaxial films onSi(100). Phys. Rev. B, 70, 155309(2004).

    [41] J. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, S. Jongthammanurak, D. T. Danielson, J. Michel, L. C. Kimerling. Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications. Appl. Phys. Lett., 87, 011110(2005).

    [42] J. Liu, J. Michel, W. Giziewicz, D. Pan, K. Wada, D. D. Cannon, S. Jongthammanurak, D. T. Danielson, L. C. Kimerling, J. Chen, F. O. M. Ilday, F. X. Kärtner, J. Yasaitis. High-performance, tensile-strained Ge p-i-n photodetectors on a Si platform. Appl. Phys. Lett., 87, 103501(2005).

    [43] M. Jutzi, M. Berroth, G. Wohl, M. Oehme, E. Kasper. Ge-on-Si vertical incidence photodiodes with 39-GHz bandwidth. IEEE Photon. Technol. Lett., 17, 1510-1512(2005).

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    [2] Yiding Lin, Danhao Ma, Kwang Hong Lee, Rui-Tao Wen, Govindo Syaranamual, Lionel C. Kimerling, Chuan Seng Tan, Jurgen Michel, "PIC-integrable, uniformly tensile-strained Ge-on-insulator photodiodes enabled by recessed SiNx stressor," Photonics Res. 9, 1255 (2021)

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    Yiding Lin, Kwang Hong Lee, Shuyu Bao, Xin Guo, Hong Wang, Jurgen Michel, Chuan Seng Tan, "High-efficiency normal-incidence vertical p-i-n photodetectors on a germanium-on-insulator platform," Photonics Res. 5, 702 (2017)

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    Paper Information

    Category: Photodetectors

    Received: Aug. 14, 2017

    Accepted: Sep. 18, 2017

    Published Online: Dec. 7, 2017

    The Author Email: Chuan Seng Tan (tancs@ntu.edu.sg)

    DOI:10.1364/PRJ.5.000702

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology