High-efficiency normal-incidence vertical p-i-n photodetectors on a germanium-on-insulator platform

Yiding Lin; Kwang Hong Lee; Shuyu Bao; Xin Guo; Hong Wang; Jurgen Michel; Chuan Seng Tan

doi:10.1364/PRJ.5.000702

Photonics Research, Volume. 5, Issue 6, 702(2017)

High-efficiency normal-incidence vertical p-i-n photodetectors on a germanium-on-insulator platform

Yiding Lin^1,2,3, Kwang Hong Lee², Shuyu Bao^1,2, Xin Guo¹, Hong Wang¹, Jurgen Michel^2,4, and Chuan Seng Tan^1,2、*

Author Affiliations

¹School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore

²Low Energy Electronic Systems (LEES), Singapore-MIT Alliance for Research and Technology, Singapore 138602, Singapore

³e-mail: liny0075@e.ntu.edu.sg

⁴Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA

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Yiding Lin, Kwang Hong Lee, Shuyu Bao, Xin Guo, Hong Wang, Jurgen Michel, Chuan Seng Tan, "High-efficiency normal-incidence vertical p-i-n photodetectors on a germanium-on-insulator platform," Photonics Res. 5, 702 (2017)

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Paper Information

Category: Photodetectors

Received: Aug. 14, 2017

Accepted: Sep. 18, 2017

Published Online: Dec. 7, 2017

The Author Email: Chuan Seng Tan (tancs@ntu.edu.sg)

DOI:10.1364/PRJ.5.000702

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