Infrared and Laser Engineering, Volume. 47, Issue 10, 1017002(2018)

Total ionizing dose radiation effects in 4T-CMOS image sensors at different biased conditions

Ma Lindong1,2,3、*, Li Yudong1,2, Guo Qi1,2, Wen Lin1,2, Zhou Dong1,2, and Feng Jie1,2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    References(12)

    [1] [1] Yan Jinyun, Jiang Jie, Zhuang Guangjun. Photoelectric response of ICMOS on total dose irradiation[J]. Optics and Precision Engineering, 2014, 22(12): 3153-3159. (in Chinese)

    [2] [2] Furuta M, Nishikawa Y, Inoue T, et al. A high-speed, high-sensitivity digital CMOS image sensor with a global shutter and 12-bit column-parallel cyclic A/D converters[J]. IEEE Journal of Solid-State Circuits, 2007, 42(4): 766-774.

    [3] [3] Shoushun C, Boussaid F, Bermak A. Robust intermediate read-out for deep submicron technology CMOS image sensors[J]. IEEE Sensors Journal, 2008, 8(3): 286-294.

    [4] [4] Wang Bo, Li Yudong, Guo Qi, et al. Total dose effects in 0.5 μm CMOS active pixel image sensor[J], Chinese Journal of Luminescence, 2015,36 (2): 242-248. (in Chinese)

    [5] [5] Wang Bo, Wen Lin, Li Yudong, et al. Degradation of saturation output of CCD induced by proton, neutron and cobalt-60 irradiation[J]. Infrared and Laser Engineering, 2015, 44(S1): 35-40. (in Chinese)

    [6] [6] Bogaerts J, Dierickx B, Mertens R. Random telegraph signals in a radiation-hardened CMOS active pixel sensor [J]. IEEE Transactions on Nuclear Science, 2002, 49(1): 249-257.

    [7] [7] Goiffon V, Hopkinson G R, Magnan P, et al. Multilevel RTS in proton irradiated CMOS image sensors manufactured in a deep submicron technology [J]. IEEE Transactions on Nuclear Science, 2009, 56(4): 2132-2141.

    [8] [8] Wang X Y. Noise in submicron CMOS image sensors [D]. Delft: Technische Universiteit Delft, 2008.

    [9] [9] Hopkins I H, Hopkinson G R. Random telegraph signals from proton-irradiated CCDs[J]. IEEE Transactions on Nuclear Science, 1993, 40(6): 1567-1574.

    [10] [10] Hopkins I H, Hopkinson G R. Further measurements of random telegraph signals in proton irradiated CCDs [J]. IEEE Transactions on Nuclear Science, 1995, 42(6): 2074-2081.

    [11] [11] Bogaerts J, Dierickx B, Meynants G, et al. Total dose and displacement damage effects in a radiation-hardened CMOS APS[J]. IEEE Transactions on Electron Devices, 2003, 50(1): 84-90.

    [12] [12] Nuns T, Quadri G, David J P, et al. Measurements of random telegraph signal in CCDs irradiated with protons and neutrons [J]. IEEE Transactions on Nuclear Science, 2006, 53(4): 1764-1771.

    CLP Journals

    [1] . Radiation effects of 0.18 μm CMOS APS by proton irradiation[J]. Infrared and Laser Engineering, 2020, 49(7): 20190433

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    Ma Lindong, Li Yudong, Guo Qi, Wen Lin, Zhou Dong, Feng Jie. Total ionizing dose radiation effects in 4T-CMOS image sensors at different biased conditions[J]. Infrared and Laser Engineering, 2018, 47(10): 1017002

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    Paper Information

    Category: 光电测量

    Received: May. 5, 2018

    Accepted: Jun. 3, 2018

    Published Online: Nov. 25, 2018

    The Author Email: Lindong Ma (malindong14@mails.ucas.ac.cn)

    DOI:10.3788/irla201847.1017002

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