Journals Articles Conferences News About CLP
Submit a paper Email Alert
Search
Search
Articles
Journals
News
Advanced Search
Top Searches
2D MaterialsTransformation opticsQuantum PhotonicsSmall lasersSemiconductor UV PhotonicsSupersymmetric microring laser arrays

Infrared and Laser Engineering, Volume. 47, Issue 10, 1017002(2018)

Total ionizing dose radiation effects in 4T-CMOS image sensors at different biased conditions

Ma Lindong1,2,3、*, Li Yudong1,2, Guo Qi1,2, Wen Lin1,2, Zhou Dong1,2, and Feng Jie1,2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
    • show less
    AbstractGet PDF
    Figures&Tables (0)
    Equations (0)
    References (12)
    Tools
    Paper Information
    Topics
    Figures & Tables(0)
    Tools

    Get Citation

    Copy Citation Text

    Ma Lindong, Li Yudong, Guo Qi, Wen Lin, Zhou Dong, Feng Jie. Total ionizing dose radiation effects in 4T-CMOS image sensors at different biased conditions[J]. Infrared and Laser Engineering, 2018, 47(10): 1017002

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Set citation alerts for article
    Save article for my favorites
    Paper Information

    Category: 光电测量

    Received: May. 5, 2018

    Accepted: Jun. 3, 2018

    Published Online: Nov. 25, 2018

    The Author Email: Lindong Ma (malindong14@mails.ucas.ac.cn)

    DOI:10.3788/irla201847.1017002

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology