Compared with Si material, SiC material is widely used in high frequency and high power applications with high temperature resistance, high voltage resistance and high current resistance due to its superior material properties of large band gap, high thermal conductivity, high breakdown voltage and high electron saturation drift rate. Conventional wire bonding scheme has been one of the most preferred interconnection structures for power modules. However, the technique limits the performance of a SiC power module due to parasitic inductance and heat dissipation issues that are inherent in bonding wires. In this article, low parasitic inductance and high efficient cooling interconnection techniques for Si power modules are introduced first. Then, attempts on developing interconnection techniques for SiC power modules are thoroughly introduced. Finally, challenges in the interconnection of SiC power module are summarized.