Journal of Applied Optics, Volume. 45, Issue 5, 1072(2024)
Experimental study on back-illuminated CMOS image sensor irradiated by CW laser
Figures & Tables(13)
Fig. 2. Experimental schematic diagram of laser illumination on CMOS image sensor
Fig. 3. Experimental site of laser illumination on CMOS image sensor
Fig. 8. Fitting curves of power density and saturated pixel number
Table 1. Parameters table of back-illuminated CMOS detector
View tableView in ArticleTable 1. Parameters table of back-illuminated CMOS detector
指标 参数 传感器型号 Sony IMX178 像元尺寸 2.4 µm×2.4 µm 靶面尺寸 1/1.8′′ 分辨率 3 072×2 048像素 黑白/彩色 黑白
Table 2. Interference threshold comparison
W/cm2 View tableView in ArticleTable 2. Interference threshold comparison
W/cm2 型号 结构 饱和阈值 过饱和阈值 饱和串扰 Micron MT9V022 前照式 5.87×10−3 6.0×102 2.0×103 Sony IMX178 背照式 1.39×10−2 1.49×104 —
Table 3. Damage threshold comparison
W/cm2 View tableView in ArticleTable 3. Damage threshold comparison
W/cm2 型号 结构 辐照 时间 点损伤 十字线 损伤 面损伤 致盲 Micron MT9V022 前照式 1 s 1.12×105 − − − 400 ms 1.62×105 1.93×105 − − Sony IMX178 背照式 1 s 1.35×106 1.74×106 1.65×107 2.27×107
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Yongbo XU, Yunzhe WANG, Changbin ZHENG, Yang LIU, Xiangzheng CHENG, Junfeng SHAO. Experimental study on back-illuminated CMOS image sensor irradiated by CW laser[J]. Journal of Applied Optics, 2024, 45(5): 1072
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Received: Sep. 20, 2023
Accepted: --
Published Online: Dec. 20, 2024
The Author Email: SHAO Junfeng (邵俊峰)
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