Concentration Distribution of Longitudinal Carriers in Silicon-doped HB-GaAs Single Crystals for Infrared LED

MA Yingjun; LIN Quan; YU Hongguo; MA Huichao; XU Xing; LI Wanpeng; XU Suocheng

Journal of Synthetic Crystals, Volume. 49, Issue 8, 1555(2020)

MA Yingjun... LIN Quan*, YU Hongguo, MA Huichao, XU Xing, LI Wanpeng and XU Suocheng |Show fewer author(s)

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[2] [2] Habchi M M, Bedoui M, Tounsi N, et al. Optical properties study of InxGa1-xAs/GaAs structures using spectral reflectance, photoreflectance and near-infrared photoluminescence［J］.Superlattices and Microstructures,2014,73: 71-81.

[4] [4] Abdenacer A, Mhamed B, Reshak A H, et al. Electronic structure and optical properties of dilute boron-bismide quatemary alloys BxGa1-xAs1-yBiy/GaAs for infrared optoelectronic devices［J］.Optik-International Journal for Light and Electron Optics,2017,135: 57-69.

[5] [5] Upadhyay S, Mandal A, Agarwal A, et al. Enhancement in multicolor photoresponse for quaternary capped In0.5Ga0.5As/GaAs quantum dot infrared photodetectors implanted with hydrogen ions［J］.Materials Research Bulletin,2016,84: 79-84.

CLP Journals

[1] LU Shujuan, CHEN Beixi, ZHANG Lu, CAO Bo, ZHANG Yunbo, MA Zhiyong, QI Xingwang, YU Hongguo. Prepration of GaAs Single Crystal for Infrared LED by Vertical Gradient Freeze Technology[J]. Journal of Synthetic Crystals, 2023, 52(2): 235

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MA Yingjun, LIN Quan, YU Hongguo, MA Huichao, XU Xing, LI Wanpeng, XU Suocheng. Concentration Distribution of Longitudinal Carriers in Silicon-doped HB-GaAs Single Crystals for Infrared LED[J]. Journal of Synthetic Crystals, 2020, 49(8): 1555

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