Researching | Concentration Distribution of Longitudinal Carriers in Silicon-doped HB-GaAs Single Crystals for Infrared LED

Journal of Synthetic Crystals, Volume. 49, Issue 8, 1555(2020)

Concentration Distribution of Longitudinal Carriers in Silicon-doped HB-GaAs Single Crystals for Infrared LED

MA Yingjun... LIN Quan*, YU Hongguo, MA Huichao, XU Xing, LI Wanpeng and XU Suocheng |Show fewer author(s)

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MA Yingjun, LIN Quan, YU Hongguo, MA Huichao, XU Xing, LI Wanpeng, XU Suocheng. Concentration Distribution of Longitudinal Carriers in Silicon-doped HB-GaAs Single Crystals for Infrared LED[J]. Journal of Synthetic Crystals, 2020, 49(8): 1555

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Received: --

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Published Online: Nov. 11, 2020

The Author Email: Quan LIN (linquan@grieom.com)

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Topics

laser devices and laser physics

Lasers and Laser Optics

laser manufacturing

Instrumentation, Measurement and Metrology