Semiconductor Optoelectronics, Volume. 43, Issue 4, 770(2022)

Evaluation of the Electrical Parameters of SiC MOSFET by Capacitance-Resistance Method

YANG Fei1... TIAN Lixin1, SHEN Zhanwei2,*, ZHANG Wenting1, SUN Guosheng2 and WEI Xiaoguang1 |Show fewer author(s)
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    References(13)

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    [6] [6] Shen Z W, Zhang F, Dimitrijev S, et al. Comparative study of electrical characteristics for n-type 4H-SiC planar and trench MOS capacitors annealed in ambient NO[J]. Chinese Phy. B, 2017, 26(10): 107101.

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    [10] [10] Ortiz-Conde A, Snchez F J G, Liou J J, et al. A review of recent MOSFET threshold voltage extraction methods[J]. Microelectronics Reliability, 2002, 42(4/5): 583-596.

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    YANG Fei, TIAN Lixin, SHEN Zhanwei, ZHANG Wenting, SUN Guosheng, WEI Xiaoguang. Evaluation of the Electrical Parameters of SiC MOSFET by Capacitance-Resistance Method[J]. Semiconductor Optoelectronics, 2022, 43(4): 770

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    Paper Information

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    Received: Mar. 14, 2022

    Accepted: --

    Published Online: Oct. 16, 2022

    The Author Email: Zhanwei SHEN (zwshen@semi.ac.cn)

    DOI:10.16818/j.issn1001-5868.2022031402

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