Semiconductor Optoelectronics, Volume. 43, Issue 4, 770(2022)
Evaluation of the Electrical Parameters of SiC MOSFET by Capacitance-Resistance Method
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YANG Fei, TIAN Lixin, SHEN Zhanwei, ZHANG Wenting, SUN Guosheng, WEI Xiaoguang. Evaluation of the Electrical Parameters of SiC MOSFET by Capacitance-Resistance Method[J]. Semiconductor Optoelectronics, 2022, 43(4): 770
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Received: Mar. 14, 2022
Accepted: --
Published Online: Oct. 16, 2022
The Author Email: Zhanwei SHEN (zwshen@semi.ac.cn)