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Semiconductor Optoelectronics, Volume. 43, Issue 4, 770(2022)

Evaluation of the Electrical Parameters of SiC MOSFET by Capacitance-Resistance Method

YANG Fei1... TIAN Lixin1, SHEN Zhanwei2,*, ZHANG Wenting1, SUN Guosheng2 and WEI Xiaoguang1 |Show fewer author(s)
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    YANG Fei, TIAN Lixin, SHEN Zhanwei, ZHANG Wenting, SUN Guosheng, WEI Xiaoguang. Evaluation of the Electrical Parameters of SiC MOSFET by Capacitance-Resistance Method[J]. Semiconductor Optoelectronics, 2022, 43(4): 770

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    Received: Mar. 14, 2022

    Accepted: --

    Published Online: Oct. 16, 2022

    The Author Email: Zhanwei SHEN (zwshen@semi.ac.cn)

    DOI:10.16818/j.issn1001-5868.2022031402

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology