Laser & Optoelectronics Progress, Volume. 58, Issue 19, 1924002(2021)

Three-Wavelength High-Reflectivity Film for All-Solid-State 355-nm Ultraviolet Laser

Qiuhui Zhuang1、* and Sanqiang Wang2
Author Affiliations
  • 1College of Mechanical Engineering, Chongqing University of Technology, Chongqing 400050, China
  • 2State Grid Chongqing Electric Power Company Marketing Service Center, Chongqing 400020, China
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    To increase the laser damage threshold, an ion-beam assisted electron-beam formation method is used for preparing high-reflection films with three wavelengths of 355, 532, and 1064 nm. First, Lambda 950 spectrophotometer is used to test the spectral performance of the film sample. Then, the influence of different substrate materials and substrate cleaning processes on the laser damage threshold of the film are verified. Finally, the weak absorption capacity of the film and the laser damage threshold under different working vacuum degrees are studied systematically, and the relationship between the weak absorption capacity of the film and the laser damage threshold is analyzed. Additionally, the relationship between the weak absorption of the thin film and the laser damage threshold value is analyzed. The results show that the reflectance at the three wavelengths meets the requirement of optical performance indicators for the solid-state 355-nm ultraviolet laser. The laser damage threshold of the film and weak absorption value do not correspond to each other when the working vacuum increases to a certain level. However, an optimal value indicates that the high-reflection film can be used as the mirror in an all-solid-state 355-nm laser.

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    Qiuhui Zhuang, Sanqiang Wang. Three-Wavelength High-Reflectivity Film for All-Solid-State 355-nm Ultraviolet Laser[J]. Laser & Optoelectronics Progress, 2021, 58(19): 1924002

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    Paper Information

    Category: Optics at Surfaces

    Received: Dec. 31, 2020

    Accepted: Mar. 2, 2021

    Published Online: Oct. 14, 2021

    The Author Email: Zhuang Qiuhui (zqh@cqut.edu.cn)

    DOI:10.3788/LOP202158.1924002

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