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Journal of Inorganic Materials, Volume. 34, Issue 3, 269(2019)

Thermoelectric Device: Contact Interface and Interface Materials

Xiao-Kai HU1...4, Shuang-Meng ZHANG1, Fu ZHAO1,2, Yong LIU1,3, Wei-Shu LIU1, [in Chinese]1,4, [in Chinese]1, [in Chinese]1,2, [in Chinese]1,3 and [in Chinese]1 |Show fewer author(s)
Author Affiliations
  • 11. Department of Material Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
  • 22. Academy for Advanced Interdisciplinary Studies, Southern University of Science and Technology, Shenzhen 518055, China
  • 33. AECC Beijing Institute of Aeronautical Materials, Beijing 100095, China
  • 44. Institute for Frontier Materials, Deakin University, Geelong 3216, Australia
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    Figures & Tables(10)
    Schematic diagram of structure of thermoelectric device (a) and electrode interface (b)
    . Schematic diagram of structure of thermoelectric device (a) and electrode interface (b)

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    Interface micrograph of commercial Bi2Te3 refrigeration device after the thermal cycle test[17]
    . Interface micrograph of commercial Bi2Te3 refrigeration device after the thermal cycle test[17]

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    Interface cracking and oxidation images of Skutterudite thermoelectric legs
    . Interface cracking and oxidation images of Skutterudite thermoelectric legs

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    Schematic diagram of a scanning voltage probe for contact resistance measurement, and a Bi2Te3-based leg (inset) (a); contact resistance measurement for both n-type Ni/Bi2Te2.7Se0.3/Ni and p-type Ni/Bi0.4Sb1.6Te3/Ni(b)[21]
    . Schematic diagram of a scanning voltage probe for contact resistance measurement, and a Bi2Te3-based leg (inset) (a); contact resistance measurement for both n-type Ni/Bi2Te2.7Se0.3/Ni and p-type Ni/Bi0.4Sb1.6Te3/Ni(b)[21]

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    Comparison of composition profile between Ni/Bi0.4Sb1.6Te3 interface (a)and Ni/Bi2Te2.7Se0.3Interface (b) obtained from a selected area SEM-EDS[21]IRL: interface reaction layer, TDR: Te-deficient region
    . Comparison of composition profile between Ni/Bi0.4Sb1.6Te3 interface (a)and Ni/Bi2Te2.7Se0.3Interface (b) obtained from a selected area SEM-EDS[21]
    IRL: interface reaction layer, TDR: Te-deficient region

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    High-temperature reaction model of electrode interface of Bi2Te3-based thermoelectric leg[21]
    . High-temperature reaction model of electrode interface of Bi2Te3-based thermoelectric leg[21]

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    Concentrating solar thermoelectric generators: new type of NiFe-based alloy applied to metallization of n-type Bi2Te3[12]
    . Concentrating solar thermoelectric generators: new type of NiFe-based alloy applied to metallization of n-type Bi2Te3[12]

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    The maximum output power (a) and efficiency (b) vs. interface contact resistivity for the simulated Bi2Te3 leg (l is the leg height)
    . The maximum output power (a) and efficiency (b) vs. interface contact resistivity for the simulated Bi2Te3 leg (l is the leg height)

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    (a) Power generation efficiency of segmented BT/SKD modules and (b) scanning electron microscopy image of SKD/Ti0.88Al0.12/Ni interface and electrode on hot side[13]
    . (a) Power generation efficiency of segmented BT/SKD modules and (b) scanning electron microscopy image of SKD/Ti0.88Al0.12/Ni interface and electrode on hot side[13]

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    • Table 1. Compositions of some solders as well as the temperature (T) at liquidus and solidus[16]

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      Table 1. Compositions of some solders as well as the temperature (T) at liquidus and solidus[16]

      T range
      /℃      		Compositions/wt%Liquidus
      T/℃      		Solidus
      T/℃
      100-20052 In+48 Sn118118
      85 Sn+10 Bi+5 Zn190168
      63 Sn+37 Pb183183
      91.2 Sn+8.8 Zn198.5198.5
      200-30050 Sn+50 Pb212183
      96.5 Sn+3 Ag+0.5 Cu220217
      95 Sn+5 Sb240232
      300-4005 Sn+95 Pb312305
      95 Pb+5 Ag364305
      75 Sn+0.25 Sb+
      0.25 Bi+24.5 Pb      		380370
      400-50094 Sn+0.2 Pb+5.8 Sb461450
      88 Pb+11.75 Sb+0.25 Bi473473
      500-60097 Pb+0.4 Sb +
      2.35 Ag+0.25 Bi      		580580
      8.5 Sn+90 Pb+1.5 Ag588588
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    Xiao-Kai HU, Shuang-Meng ZHANG, Fu ZHAO, Yong LIU, Wei-Shu LIU, [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Thermoelectric Device: Contact Interface and Interface Materials[J]. Journal of Inorganic Materials, 2019, 34(3): 269

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    Paper Information

    Category: Research Articles

    Received: Jun. 21, 2018

    Accepted: --

    Published Online: Sep. 26, 2021

    The Author Email:

    DOI:10.15541/jim20180248

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology