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Journal of Semiconductors, Volume. 44, Issue 8, 082801(2023)

High threshold voltage enhancement-mode GaN p-FET with Si-rich LPCVD SiNx gate insulator for high hole mobility

Liyang Zhu1, Kuangli Chen1, Ying Ma2, Yong Cai2, Chunhua Zhou1、*, Zhaoji Li1, Bo Zhang1, and Qi Zhou1,3、**
Author Affiliations
  • 1State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
  • 2Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215123, China
  • 3Institute of Electronic and Information Engineering, University of Electronic Science and Technology of China, Dongguan 523808, China
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    (Color online) (a) Epitaxial structure and schematic of the proposed device. (b) The fabrication procedure. The I–V characteristic measured from TLM for the samples with (c) N-rich LPCVD SiNx and (d) Si-rich LPCVD SiNx.

    Fig. 1. (Color online) (a) Epitaxial structure and schematic of the proposed device. (b) The fabrication procedure. The I–V characteristic measured from TLM for the samples with (c) N-rich LPCVD SiNx and (d) Si-rich LPCVD SiNx.

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    (Color online) The focused ion beam section of ~22 nm channel.

    Fig. 2. (Color online) The focused ion beam section of ~22 nm channel.

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    (Color online) The transfer characteristic of (a) Si-rich sample and (b) N-rich sample. The output characteristic of (c) Si-rich sample and (d) N-rich.

    Fig. 3. (Color online) The transfer characteristic of (a) Si-rich sample and (b) N-rich sample. The output characteristic of (c) Si-rich sample and (d) N-rich.

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    (Color online) The μeff and the nh of (a) Si-rich and (b) N-rich sample with ~48 nm trench.

    Fig. 4. (Color online) The μeff and the nh of (a) Si-rich and (b) N-rich sample with ~48 nm trench.

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    (Color online) (a) The focused ion beam section of ~12 nm channel. (b) The surface morphology characterized before/after recess.

    Fig. 5. (Color online) (a) The focused ion beam section of ~12 nm channel. (b) The surface morphology characterized before/after recess.

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    (Color online) The transfer characteristic of (a) Si-rich sample and (b) N-rich sample. The output characteristic of (c) Si-rich sample and (d) N-rich.

    Fig. 6. (Color online) The transfer characteristic of (a) Si-rich sample and (b) N-rich sample. The output characteristic of (c) Si-rich sample and (d) N-rich.

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    (Color online) The ΔVTH with different VGS sweep ranges.

    Fig. 7. (Color online) The ΔVTH with different VGS sweep ranges.

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    (Color online) The Band diagram schematics of the MIS gate of Si-rich sample during the (a) initial state, (b) up sweep and (c) down back.

    Fig. 8. (Color online) The Band diagram schematics of the MIS gate of Si-rich sample during the (a) initial state, (b) up sweep and (c) down back.

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    (Color online) the Band diagram schematics of the MIS gate of N-rich sample during the (a) initial state, (b) up sweep and (c) down back.

    Fig. 9. (Color online) the Band diagram schematics of the MIS gate of N-rich sample during the (a) initial state, (b) up sweep and (c) down back.

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    (Color online) The μeff and the nh of (a) Si-rich and (b) N-rich sample with ~58 nm trench.

    Fig. 10. (Color online) The μeff and the nh of (a) Si-rich and (b) N-rich sample with ~58 nm trench.

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    • Table 1. Benchmark of typical parameters of GaN p-FETs.

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      Table 1. Benchmark of typical parameters of GaN p-FETs.

      GroupMobility (cm2/(V∙s))ION/IOFFfVTH (V)ΔVTH (V@VGS_min)RON (kΩ∙mm)
      a mobility in channel; b mobility in access region;c defined at ID = 0.01 mA/mm; d defined by linear-extrapolation;e N. A. is abbreviation for “not available”; f IOFF in here was the current when VGS is biased to 0 V.
      This work19.4a5×105−2.3c−0.1 (@-10 V)5.7
      Xidian[14]2b~102−2.2dN. A.0.54
      Sheffield[16]11.8a~107−0.73c−0.12 (@−8 V)1
      HKUST[24]N. A.e~2×107−1.7c~−0.1 (@−6 V)0.65
      SINANO[22]11b~106−2.7c−2.4 (@−12 V)0.061
      MIT[12]15b~103.5dN. A.2.3
      MIT[13]11b~10−0.3dN. A.2.3
      MIT[18]10a~102−1N. A.2.4
      MIT[17]7.5a~1062N. A.
      HKUST[15]10.2b~2×107−1.7cN. A.
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    Liyang Zhu, Kuangli Chen, Ying Ma, Yong Cai, Chunhua Zhou, Zhaoji Li, Bo Zhang, Qi Zhou. High threshold voltage enhancement-mode GaN p-FET with Si-rich LPCVD SiNx gate insulator for high hole mobility[J]. Journal of Semiconductors, 2023, 44(8): 082801

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    Paper Information

    Category: Articles

    Received: Jan. 14, 2023

    Accepted: --

    Published Online: Sep. 21, 2023

    The Author Email: Zhou Chunhua (czhou@uestc.edu.cn), Zhou Qi (zhouqi@uestc.edu.cn)

    DOI:10.1088/1674-4926/44/8/082801

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology