Chinese Physics B, Volume. 29, Issue 10, (2020)
Simulation study of device physics and design of GeOI TFET with PNN structure and buried layer for high performance
Large threshold voltage and small on-state current are the main limitations of the normal tunneling field effect transistor (TFET). In this paper, a novel TFET with gate-controlled P+N+N+ structure based on partially depleted GeOI (PD-GeOI) substrate is proposed. With the buried P+-doped layer (BP layer) introduced under P+N+N+ structure, the proposed device behaves as a two-tunneling line device and can be shut off by the BP junction, resulting in a high on-state current and low threshold voltage. Simulation results show that the on-state current density Ion of the proposed TFET can be as large as 3.4 × 10-4 A/μm, and the average subthreshold swing (SS) is 55 mV/decade. Moreover, both of Ion and SS can be optimized by lengthening channel and buried P+ layer. The off-state current density of TTP TFET is 4.4 × 10-10 A/μm, and the threshold voltage is 0.13 V, showing better performance than normal germanium-based TFET. Furthermore, the physics and device design of this novel structure are explored in detail.
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Bin Wang, Sheng Hu, Yue Feng, Peng Li, Hui-Yong Hu, Bin Shu. Simulation study of device physics and design of GeOI TFET with PNN structure and buried layer for high performance[J]. Chinese Physics B, 2020, 29(10):
Received: Apr. 23, 2020
Accepted: --
Published Online: Apr. 21, 2021
The Author Email: Wang Bin (wbin@xidian.edu.cn)