Research Progress on High-speed Directly Modulated Semiconductor Lasers

Qi TIAN; Yu HAN; Rui-gang ZHANG; Min-ming ZHANG

doi:10.13756/j.gtxyj.2023.02.009

Study On Optical Communications, Volume. 49, Issue 2, 55(2023)

Research Progress on High-speed Directly Modulated Semiconductor Lasers

Qi TIAN1...2, Yu HAN1,2, Rui-gang ZHANG1,2, and Min-ming ZHANG1,23,* |Show fewer author(s)

Author Affiliations

¹School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China

²National Engineering Research Center for Next Generation Internet Access System, Huazhong University of Science and Technology, Wuhan 430074, China

³Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China

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Fig. 1. Schematic diagrams of the RWG structure and the BH waveguide structure

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Fig. 2. Schematic diagram of the laser with groove-in-trench ridge waveguide structure

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Table 1. Representative achievements of wide temperature and high speed DFB lasers

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Table 1. Representative achievements of wide temperature and high speed DFB lasers

编号	年份	结构特点	性能表现	参考文献编号
1	1999	RWG, InGaAsP材料，280 μm腔长	10.0 Gbit/s@70 ℃	[12]
2	2002	RWG, InGaAsP材料，300 μm腔长	10.0 Gbit/s@85 ℃	[14]
3	2000	RWG, InGaAlAs材料	10.0 Gbit/s@85 ℃	[19]
4	2003	RWG, InGaAlAs材料，200 μm腔长	12.5 Gbit/s@115 ℃	[20]
5	2004	RWG, InGaAlAs材料，250 μm腔长	10.0 Gbit/s@120 ℃	[21]
6	2009	RWG, InGaAlAs材料，160 μm腔长	25.0 Gbit/s@95 ℃	[22]
7	2009	RWG, InGaAlAs材料，200 μm腔长	25.0 Gbit/s@85 ℃	[24]
8	2006	RWG, InGaAlAs材料，100 μm腔长	40.0 Gbit/s@65 ℃	[26]
9	2008	BH波导，InGaAlAs材料，150 μm腔长	40.0 Gbit/s@75 ℃	[28]
10	2009	BH波导，InGaAlAs材料，100 μm腔长	40.0 Gbit/s@85 ℃	[29,30]
11	2015	BH波导，InGaAlAs材料，120 μm腔长	50.0 Gbit/s@85 ℃	[31]
12	2022	新型沟中沟RWG，InGaAlAs材料	高温下同一注入电流带宽比常温RWG提高3.7 GHz	[36]

Table 2. Representative achievements of ultra-high-speed lasers

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Table 2. Representative achievements of ultra-high-speed lasers

编号	年份	结构特点	性能表现	参考文献编号
1	2007	RWG，250 μm DFB激光器＋300 μm无源反馈波导	29 GHz@40 mA	[44]
2	2011	RWG，150 μm DFB激光器＋200 μm无源反馈波导	37 GHz@70 mA	[45]
3	2012	BH波导，200 μm DFB激光器＋200 μm无源反馈波导	34 GHz@60 mA	[46]
4	2015	RWG, 220 μm DFB激光器＋330 μm无源波导(相位调整)＋340 μm有源反馈波导(强度调整)	双峰响应，带宽>30 GHz	[49]
5	2016	RWG，375 μm DFB激光器＋220 μm有源反馈波导	59 GHz	[50]
6	1997	RWG, 200 μm FP腔＋300 μm DBR	31 GHz@130 mA	[53]
7	2005	RWG, 450 μm FP腔＋500 μm DBR＋500 μm无源波导(调整相位)	37 GHz@172 mA	[54]
8	2017	RWG, 50 μm DFB激光器＋200 μm DBR，同时利用失谐加载效应和PPR双峰响应	55 GHz@36.2 mA	[55]
9	2020	BH波导，80 μm DFB激光器＋120 μm无源波导，无源波导末端3%反射率	65 GHz	[57]
10	2020	BH波导，80 μmDFB激光器＋120 μm无源波导，无源波导末端3%反射率	75 GHz@65 mA	[58,59]
11	2021	BH波导，同时集成两种不同耦合系数的DBR，提高调整自由度	65 GHz	[59]
12	2021	BH波导，在DBR上设置两个电极分别加电，提高调整自由度	65 GHz	[59]
13	2021	BH波导，80 μm DFB激光器＋60 μm DBR，薄膜电阻减小寄生常数	108 GHz@27 mA	[60]

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Qi TIAN, Yu HAN, Rui-gang ZHANG, Min-ming ZHANG. Research Progress on High-speed Directly Modulated Semiconductor Lasers[J]. Study On Optical Communications, 2023, 49(2): 55

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