Researching | Two-step growth of β-Ga2O3 on c-plane sapphire using MOCVD for solar-blind photodetector

Journal of Semiconductors, Volume. 45, Issue 2, 022502(2024)

Two-step growth of β-Ga₂O₃ on c-plane sapphire using MOCVD for solar-blind photodetector

Peipei Ma^1,2, Jun Zheng^1,2、*, Xiangquan Liu^1,2, Zhi Liu^1,2, Yuhua Zuo^1,2, and Buwen Cheng^1,2

Author Affiliations

¹State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

²Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

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Peipei Ma, Jun Zheng, Xiangquan Liu, Zhi Liu, Yuhua Zuo, Buwen Cheng. Two-step growth of β-Ga₂O₃ on c-plane sapphire using MOCVD for solar-blind photodetector[J]. Journal of Semiconductors, 2024, 45(2): 022502

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Paper Information

Category: Articles

Received: Sep. 12, 2023

Accepted: --

Published Online: Apr. 24, 2024

The Author Email: Zheng Jun (JZheng)

DOI:10.1088/1674-4926/45/2/022502

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laser devices and laser physics

Lasers and Laser Optics

laser manufacturing

Instrumentation, Measurement and Metrology