Journal of Semiconductors, Volume. 45, Issue 2, 022502(2024)
Two-step growth of β-Ga2O3 on c-plane sapphire using MOCVD for solar-blind photodetector
Fig. 1. (Color online) (a) XRD ω−2θ scan and (b) FWHM of rocking curve for β-Ga2O3 films grown at different TB. Inset shows the XRD ω scan for films.
Fig. 2. (Color online) (a) AFM images and (b) RMS roughness of β-Ga2O3 films, (c) film thicknesses obtained from the cross-sectional SEM. Inset shows the cross-sectional image of film grown at TB = 700 °C.
Fig. 3. (Color online) (a) The optical microscope diagram and (b) structural diagram of MSM photodetector. (c) The I−V characteristics of the MSM photodetector in the dark and illuminated by 254 and 365 nm. (d) The energy band diagram and photogenerated carriers of MSM β-Ga2O3 detector with external bias under 254 nm illumination.
Fig. 4. (Color online) (a) The time-dependent photoresponse of the Ga2O3 photodetector with external bias to 254 nm illumination, (b) the experimental data and the fitting curve of rise and decay process.
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Peipei Ma, Jun Zheng, Xiangquan Liu, Zhi Liu, Yuhua Zuo, Buwen Cheng. Two-step growth of β-Ga2O3 on c-plane sapphire using MOCVD for solar-blind photodetector[J]. Journal of Semiconductors, 2024, 45(2): 022502
Category: Articles
Received: Sep. 12, 2023
Accepted: --
Published Online: Apr. 24, 2024
The Author Email: Zheng Jun (JZheng)