Microelectronics, Volume. 54, Issue 2, 287(2024)

Improved SiC LBJT Behavior Model Considering Recombination Current

PAN Can1... MOU Bingfu1,2, LI Jun1,2, Wang Yinxin1,2, and GUO Linlin12 |Show fewer author(s)
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    References(6)

    [4] [4] BHATTI A S, SAJJAD S, BHOPAL F, et al. An insight into the high temperature performance of SiC bipolar junction transistor [J]. 2009 International Semiconductor Device Research Symposium. College Park, MD, USA. 2009: 1-2.

    [7] [7] LIANG S, WANG J, PENG Z, et al. A modified behavior spice model for SiC BJT [C] // IEEE Applied Power Electronics Conference and Exposition. San Antonio, TX, USA. 2018: 238-143.

    [9] [9] RASHID A U, HOSSAIN M M, ROY S, et al.Numerical simulation model development and comparative analysis of low-voltage SiC BJT for compact modeling [C] // IEEE 7th Workshop on Wide Bandgap Power Devices and Applications.Raleigh, NC, USA. 2019: 137-142.

    [10] [10] JOHANNESSON D, NAWAZ M. Development of a simple analytical PSpice model for SiC-based BJT power modules [J]. IEEE Transactions on Power Electronics, 2016, 31(6): 4517-4525.

    [11] [11] HOU S, HELLSTR?M P E, ZETTERLING C M. A 4H-SiC BJT as a switch for on-chip integrated UV photodiode [J]. IEEE Electron Device Letters, 2019,40(1): 51-54.

    [12] [12] LIANG S, WANG J, DENG L, et al. Monolithic integration of SiC power BJT and small-signal BJTs for power ICs [J]. IEEE Journal of Emerging and Selected Topics in Power Electronics, 2020, 8(1): 24-30.

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    PAN Can, MOU Bingfu, LI Jun, Wang Yinxin, GUO Linlin. Improved SiC LBJT Behavior Model Considering Recombination Current[J]. Microelectronics, 2024, 54(2): 287

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    Paper Information

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    Received: Sep. 18, 2023

    Accepted: --

    Published Online: Aug. 21, 2024

    The Author Email:

    DOI:10.13911/j.cnki.1004-3365.230365

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