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Microelectronics, Volume. 54, Issue 2, 287(2024)

Improved SiC LBJT Behavior Model Considering Recombination Current

PAN Can1... MOU Bingfu1,2, LI Jun1,2, Wang Yinxin1,2, and GUO Linlin12 |Show fewer author(s)
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    PAN Can, MOU Bingfu, LI Jun, Wang Yinxin, GUO Linlin. Improved SiC LBJT Behavior Model Considering Recombination Current[J]. Microelectronics, 2024, 54(2): 287

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    Received: Sep. 18, 2023

    Accepted: --

    Published Online: Aug. 21, 2024

    The Author Email:

    DOI:10.13911/j.cnki.1004-3365.230365

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology