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Optoelectronics Letters, Volume. 20, Issue 2, 89(2024)

InGaN multiple quantum well based light-emitting diodes with indium composition gradient InGaN quantum barriers

Xien SANG1... Yuan XU1, Mengshuang YIN1, Fang WANG1,2,3,4,*, J LIOU Juin5, and Yuhuai LIU1,2,34 |Show fewer author(s)
Author Affiliations
  • 1National Center for International Joint Research of Electronic Materials and Systems, International Joint-Laboratory of Electronic Materials and Systems of Henan Province, School of Electrical and Information Engineering, Zhengzhou University, Zhengzhou 450001, China
  • 2Institute of Intelligence Sensing, Zhengzhou University, Zhengzhou 450001, China
  • 3Research Institute of Industrial Technology Co., Ltd., Zhengzhou University, Zhengzhou 450001, China
  • 4Zhengzhou Way Do Electronics Co., Ltd., Zhengzhou 450001, China
  • 5School of Electrical and Information Engineering, North Minzu University, Yinchuan 750001, China
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    SANG Xien, XU Yuan, YIN Mengshuang, WANG Fang, LIOU Juin J, LIU Yuhuai. InGaN multiple quantum well based light-emitting diodes with indium composition gradient InGaN quantum barriers[J]. Optoelectronics Letters, 2024, 20(2): 89

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    Paper Information

    Received: Jun. 6, 2023

    Accepted: Aug. 16, 2023

    Published Online: Jul. 24, 2024

    The Author Email: Fang WANG (iefwang@zzu.edu.cn)

    DOI:10.1007/s11801-024-3099-0

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology