Opto-Electronic Engineering, Volume. 51, Issue 6, 240077-1(2024)

The influence of active layer sputtering process and annealing temperature on the electrical properties of IZO TFT

Cong Wang1...3, Youkun Ding2 and Yurong Liu2,* |Show fewer author(s)
Author Affiliations
  • 1Post-Doctoral Research Station, Shanwei Marine Industry Institute, Shanwei, Guangdong 516600, China
  • 2School of Microelectronics, South China University of Technology, Guangzhou, Guangdong 510640, China
  • 3School of Engineering, Shanwei Institute of Technology, Shanwei, Guangdong 516600, China
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    References(17)

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    [3] H C Li, Y R Liu, K W GENG et al. Temperature dependence of the electrical characteristics of ZnO thin film transistor with high-k NbLaO gate dielectric. J Vac Sci Technol B, 39, 012202(2021).

    [4] L Lu, Z H Xia, J P Li et al. A comparative study on fluorination and oxidation of Indium–Gallium–Zinc oxide thin-film transistors. IEEE Electron Device Lett, 39, 196-199(2018).

    [5] J S Seo, J H Jeon, Y H Hwang et al. Solution-processed flexible fluorine-doped indium zinc oxide thin-film transistors fabricated on plastic film at low temperature. Sci Rep, 3, 2085(2013).

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    [8] Y K Moon, S Lee, W S Kim et al. Improvement in the bias stability of amorphous indium gallium zinc oxide thin-film transistors using an O2 plasma-treated insulator. Appl Phys Lett, 95, 013507(2009).

    [9] M Li, L F Lan, M Xu et al. Performance improvement of oxide thin-film transistors with a two-step-annealing method. Solid-State Electron, 91, 9-12(2014).

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    [14] S Iwamatsu, K Takechi, Y Abe et al. Characterization of stress-controlled a-IGZO thin films and their applications to thin-film transistor and micro-electromechanical system processes, 133-136(2013).

    [15] M R Alexander, G E Thompson, G Beamson. Characterization of the oxide/hydroxide surface of aluminium using x-ray photoelectron spectroscopy: a procedure for curve fitting the O 1s core level. Surf Interface Anal, 29, 468-477(2000).

    [16] S Hwang, J H Lee, C H Woo et al. Effect of annealing temperature on the electrical performances of solution-processed InGaZnO thin film transistors. Thin Solid Films, 519, 5146-5149(2011).

    [17] S Y Sung, K M Jo, S Y Kim et al. Effects of post-annealing treatments on the transfer characteristics of amorphous indium-gallium-zinc oxide thin film transistors. J Nanoelectron Optoelectron, 6, 310-314(2011).

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    Cong Wang, Youkun Ding, Yurong Liu. The influence of active layer sputtering process and annealing temperature on the electrical properties of IZO TFT[J]. Opto-Electronic Engineering, 2024, 51(6): 240077-1

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    Paper Information

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    Received: Mar. 28, 2024

    Accepted: May. 16, 2024

    Published Online: Oct. 21, 2024

    The Author Email: Liu Yurong (刘玉荣)

    DOI:10.12086/oee.2024.240077

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