Opto-Electronic Engineering, Volume. 51, Issue 6, 240077-1(2024)

The influence of active layer sputtering process and annealing temperature on the electrical properties of IZO TFT

Cong Wang1...3, Youkun Ding2 and Yurong Liu2,* |Show fewer author(s)
Author Affiliations
  • 1Post-Doctoral Research Station, Shanwei Marine Industry Institute, Shanwei, Guangdong 516600, China
  • 2School of Microelectronics, South China University of Technology, Guangzhou, Guangdong 510640, China
  • 3School of Engineering, Shanwei Institute of Technology, Shanwei, Guangdong 516600, China
  • show less
    Figures & Tables(6)
    Structure and physical image of the IZO TFT. (a) Structure of the IZO TFT; (b) Physical image of the IZO TFT
    AFM and XRD images of the IZO thin films. (a) AFM; (b) XRD
    Electrical properties of a type IZO TFT. (a) Output characteristics; (b) Transfer characteristics
    Electrical characteristics of IZO TFT prepared at different ratios of argon to oxygen gas flow. (a) Transfer characteristics;(b) µsat and SS; (c) Vth and Ion/Ioff
    Electrical characteristics of IZO TFT prepared under different sputtering gas pressures. (a) Transfer characteristics; (b) µsat and SS ; (c) Vth and Ion/Ioff
    Transfer characteristic curves of IZO TFT under different annealing temperatures
    Tools

    Get Citation

    Copy Citation Text

    Cong Wang, Youkun Ding, Yurong Liu. The influence of active layer sputtering process and annealing temperature on the electrical properties of IZO TFT[J]. Opto-Electronic Engineering, 2024, 51(6): 240077-1

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category:

    Received: Mar. 28, 2024

    Accepted: May. 16, 2024

    Published Online: Oct. 21, 2024

    The Author Email: Liu Yurong (刘玉荣)

    DOI:10.12086/oee.2024.240077

    Topics