Opto-Electronic Engineering, Volume. 51, Issue 6, 240077-1(2024)
The influence of active layer sputtering process and annealing temperature on the electrical properties of IZO TFT
Fig. 1. Structure and physical image of the IZO TFT. (a) Structure of the IZO TFT; (b) Physical image of the IZO TFT
Fig. 2. AFM and XRD images of the IZO thin films. (a) AFM; (b) XRD
Fig. 3. Electrical properties of a type IZO TFT. (a) Output characteristics; (b) Transfer characteristics
Fig. 4. Electrical characteristics of IZO TFT prepared at different ratios of argon to oxygen gas flow. (a) Transfer characteristics;(b) µsat and SS; (c) Vth and Ion/Ioff
Fig. 5. Electrical characteristics of IZO TFT prepared under different sputtering gas pressures. (a) Transfer characteristics; (b) µsat and SS ; (c) Vth and Ion/Ioff
Fig. 6. Transfer characteristic curves of IZO TFT under different annealing temperatures
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Cong Wang, Youkun Ding, Yurong Liu. The influence of active layer sputtering process and annealing temperature on the electrical properties of IZO TFT[J]. Opto-Electronic Engineering, 2024, 51(6): 240077-1
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Received: Mar. 28, 2024
Accepted: May. 16, 2024
Published Online: Oct. 21, 2024
The Author Email: Liu Yurong (刘玉荣)