Microelectronics, Volume. 53, Issue 4, 730(2023)

Effect of Phosphorus and Arsenic Injection on Static Parameters of Trench MOSFET

HU Weiran and FENG Quanyuan
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    References(3)

    [5] [5] DISNEY D, SHEN Z J. Review of silicon power semiconductor technologies for power supply on chip and power supply in package applications [J]. IEEE Transactions on Power Electronics, 2013, 28(9): 4168-4181.

    [7] [7] ZHOU X, FENG Q. Comparison of different ways of extra phosphorus injection which decrease the threshold voltage and on-resistance of UMOS [C] // 2020 IEEE International Applied Computational Electromagnetics Society Symposium (ACES). 2020: 1-2.

    [11] [11] CHEN H, LI X, WEI Z, et al. Improved method to analysis the doping profile for ion implants in silicon [C] // 2021 China Semiconductor Technology International Conference (CSTIC). Shanghai, China. 2021: 1-3.

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    HU Weiran, FENG Quanyuan. Effect of Phosphorus and Arsenic Injection on Static Parameters of Trench MOSFET[J]. Microelectronics, 2023, 53(4): 730

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    Paper Information

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    Received: Nov. 23, 2022

    Accepted: --

    Published Online: Jan. 3, 2024

    The Author Email:

    DOI:10.13911/j.cnki.1004-3365.220473

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