Microelectronics, Volume. 53, Issue 4, 730(2023)

Effect of Phosphorus and Arsenic Injection on Static Parameters of Trench MOSFET

HU Weiran and FENG Quanyuan
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    HU Weiran, FENG Quanyuan. Effect of Phosphorus and Arsenic Injection on Static Parameters of Trench MOSFET[J]. Microelectronics, 2023, 53(4): 730

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    Paper Information

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    Received: Nov. 23, 2022

    Accepted: --

    Published Online: Jan. 3, 2024

    The Author Email:

    DOI:10.13911/j.cnki.1004-3365.220473

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