Reliable ferroelectricity down to cryogenic temperature in wake-up free Hf0.5Zr0.5O2 thin films by thermal atomic layer deposition

Shuyu Wu; Rongrong Cao; Hao Jiang; Yu Li; Xumeng Zhang; Yang Yang; Yan Wang; Yingfen Wei; Qi Liu

doi:10.1088/1674-4926/45/3/032301

Journal of Semiconductors, Volume. 45, Issue 3, 032301(2024)

Reliable ferroelectricity down to cryogenic temperature in wake-up free Hf_0.5Zr_0.5O₂ thin films by thermal atomic layer deposition

Shuyu Wu^1,4, Rongrong Cao³, Hao Jiang^2、*, Yu Li², Xumeng Zhang², Yang Yang¹, Yan Wang¹, Yingfen Wei^2、**, and Qi Liu²

Author Affiliations

¹State Key Laboratory of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

²Frontier institute of Chip and System, Fudan University, Shanghai 200433, China

³College of Electronic Science and Technology, National University of Defense Technology, Changsha 410073, China

⁴University of Chinese Academy of Sciences, Beijing 100049, China

show less

References(21)

[1] T S Böscke, J Müller, D Bräuhaus et al. Ferroelectricity in hafnium oxide thin films. Appl Phys Lett, 99, 102903(2011).

[2] S S Cheema, D Kwon, N Shanker et al. Enhanced ferroelectricity in ultrathin films grown directly on silicon. Nature, 580, 478(2020).

[3] W Banerjee, A Kashir, S Kamba. Hafnium oxide (HfO2)–A multifunctional oxide: A review on the prospect and challenges of hafnium oxide in resistive switching and ferroelectric memories. Small, 18, 2107575(2022).

[4] A I Khan, A Keshavarzi, S Datta. The future of ferroelectric field-effect transistor technology. Nat Electron, 3, 588(2020).

[5] R R Cao, X M Zhang, S Liu et al. Compact artificial neuron based on anti-ferroelectric transistor. Nat Commun, 13, 7018(2022).

[7] J Müller, T S Böscke, U Schröder et al. Ferroelectricity in simple binary ZrO2 and HfO2. Nano Lett, 12, 4318(2012).

[8] M D Henry, S W Smith, R M Lewis et al. Stabilization of ferroelectric phase of Hf0.58Zr0.42O2 on NbN at 4 K. Appl Phys Lett, 114, 092903(2019).

[9] J Hur, Y C Luo, Z Wang et al. Characterizing ferroelectric properties of Hf0.5Zr0.5O2 from deep-cryogenic temperature (4 K) to 400 K. IEEE J Explor Solid State Comput Devices Circuits, 7, 168(2021).

[10] M H Park, C C Chung, T Schenk et al. Origin of temperature-dependent ferroelectricity in Si-doped HfO2. Adv Elect Materials, 4, 1700489(2018).

[11] D Y Zhou, Y Guan, M M Vopson et al. Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ferroelectric thin films. Acta Mater, 99, 240(2015).

[12] D Wang, J L Wang, Q A Li et al. Stable ferroelectric properties of Hf0.5Zr0.5O2 thin films within a broad working temperature range. Jpn J Appl Phys, 58, 090910(2019).

[13] M Pešić, F P G Fengler, L Larcher et al. Physical mechanisms behind the field-cycling behavior of HfO2-based ferroelectric capacitors. Adv Funct Materials, 26, 4601(2016).

[14] J W Adkins, I Fina, F Sánchez et al. Thermal evolution of ferroelectric behavior in epitaxial Hf0.5Zr0.5O2. Appl Phys Lett, 117, 142902(2020).

[15] H Liu, Q Y Yang, C J Jin et al. Mobile-ionic FETs with ultra-scaled amorphous dielectric achieving ferroelectric behaviors and sub-kT/q swing with temperature down to 77 K. Sci China Inf Sci(2023).

[16] P F Jiang, Q Luo, X X Xu et al. Wake-up effect in HfO2-based ferroelectric films. Adv Elect Materials, 7, 2000728(2021).

[17] J P B Silva, K C Sekhar, R F Negrea et al. Progress and perspective on different strategies to achieve wake-up-free ferroelectric hafnia and zirconia-based thin films. Appl Mater Today, 26, 101394(2022).

[18] M H Park, H J Kim, Y J Kim et al. Study on the internal field and conduction mechanism of atomic layer deposited ferroelectric Hf0.5Zr0.5O2 thin films. J Mater Chem C, 3, 6291(2015).

[19] H Jiang, M A Bhuiyan, Z Liu et al. A study of BEOL processed Hf0.5Zr0.5O2- based ferroelectric capacitors and their potential for automotive applications(2020).

[20] M H Park, H J Kim, Y J Kim et al. Giant negative electrocaloric effects of Hf0.5Zr0.5O2 thin films. Adv Mater, 28, 7956(2016).

[21] K Y Hsiang, J Y Lee, Z F Lou et al. Cryogenic endurance of anti-ferroelectric and ferroelectric Hf1-xZrxO2 for quantum computing applications(2023).

[22] J Chen, C Jin, X Yu et al. Impact of oxygen vacancy on ferroelectric characteristics and its implication for wake-up and fatigue of HfO2-based thin films. IEEE Trans Electron Devices, 69, 5297(2022).

Tools

Get Citation

Copy Citation Text

Shuyu Wu, Rongrong Cao, Hao Jiang, Yu Li, Xumeng Zhang, Yang Yang, Yan Wang, Yingfen Wei, Qi Liu. Reliable ferroelectricity down to cryogenic temperature in wake-up free Hf_0.5Zr_0.5O₂ thin films by thermal atomic layer deposition[J]. Journal of Semiconductors, 2024, 45(3): 032301

Download Citation

EndNote(RIS)BibTex Plain Text

Set citation alerts for article

Save article for my favorites

Paper Information

Category: Articles

Received: Aug. 30, 2023

Accepted: --

Published Online: Apr. 24, 2024

The Author Email: Jiang Hao (HJiang), Wei Yingfen (YFWei)

DOI:10.1088/1674-4926/45/3/032301

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology