[9] [9] BAKOWSKI M, RANSTAD P. Design and characterization of newly developed 10 kV 2 A SiC p-in diode for soft-switching industrial power supply.IEEE Transactions on Electron Devices [J], 2015, 62(2): 366-373.

[10] [10] HULL B A, SUMAKERIS J J, O’LOUGHLIN M J,et al. Development of large area (up to 1.5 cm2) 4HSiC 10 kV junction barrier Schottky rectifiers [J].Materials Science Forum. 2008, 600-603: 931-934.

[11] [11] SUNDARESANA S G, STURDEVANT C,MARRIPELLY M, et al. 12.9 kV SiC PiN diodes with low on-state drops and high carrier lifetimes [J].Materials Science Forum, 2012, 717(2): 949-952.