Chinese Optics Letters, Volume. 17, Issue 3, 031601(2019)

Effect of 1070  nm laser intensity on parameters of In0.3Ga0.7As solar cell

Guangji Li1, Hongchao Zhang1、**, Chengmin Wang1,2, Yunxiang Pan1, Jian Lu1、*, and Dayong Zhou3
Author Affiliations
  • 1School of Science, Nanjing University of Science and Technology, Nanjing 210094, China
  • 2College of Mechanical Engineering, Huaian Vocational College of Information Technology, Huaian 223003, China
  • 3State Key Laboratory of High-Efficiency Power Conversion, Shanghai Institute of Space Power-Sources, Shanghai 200245, China
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    Figures & Tables(8)
    (a) Schematic diagram of In0.3Ga0.7As solar cell. (b) The picture of the solar cell.
    I–V curves of the solar cell under different laser power densities. (The dots are experimental results, and the lines are calculation results. The unit of Plaser is mW/cm2.)
    Effects of Plaser on the current at short circuit and maximum power point. (The function in the figure is a linear fitting function of the short circuit current.)
    Effects of Plaser on the voltage at open circuit and maximum power point. The inset shows the relationship between Voc/Vm and Plaser.
    Effects of Plaser on fill factor and conversion efficiency.
    Effects of Plaser on series and parallel resistances.
    Effects of Plaser on the ideality factor and reverse saturation current.
    Effects of Plaser on the photo-generated current (the function in the graph is a linear fitting expression)
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    Guangji Li, Hongchao Zhang, Chengmin Wang, Yunxiang Pan, Jian Lu, Dayong Zhou. Effect of 1070  nm laser intensity on parameters of In0.3Ga0.7As solar cell[J]. Chinese Optics Letters, 2019, 17(3): 031601

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    Paper Information

    Category: Materials

    Received: Sep. 29, 2018

    Accepted: Dec. 7, 2018

    Published Online: Mar. 8, 2019

    The Author Email: Hongchao Zhang (hongchao@njust.edu.cn), Jian Lu (lujian@mail.njust.edu.cn)

    DOI:10.3788/COL201917.031601

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