Effect of 1070  nm laser intensity on parameters of In<sub>0.3</sub>Ga<sub>0.7</sub>As solar cell

Guangji Li; Hongchao Zhang; Chengmin Wang; Yunxiang Pan; Jian Lu; Dayong Zhou

doi:10.3788/COL201917.031601

Chinese Optics Letters, Volume. 17, Issue 3, 031601(2019)

Effect of 1070 nm laser intensity on parameters of In_0.3Ga_0.7As solar cell

Guangji Li¹, Hongchao Zhang^1、**, Chengmin Wang^1,2, Yunxiang Pan¹, Jian Lu^1、*, and Dayong Zhou³

Author Affiliations

¹School of Science, Nanjing University of Science and Technology, Nanjing 210094, China

²College of Mechanical Engineering, Huaian Vocational College of Information Technology, Huaian 223003, China

³State Key Laboratory of High-Efficiency Power Conversion, Shanghai Institute of Space Power-Sources, Shanghai 200245, China

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Guangji Li, Hongchao Zhang, Chengmin Wang, Yunxiang Pan, Jian Lu, Dayong Zhou. Effect of 1070 nm laser intensity on parameters of In_0.3Ga_0.7As solar cell[J]. Chinese Optics Letters, 2019, 17(3): 031601

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Paper Information

Category: Materials

Received: Sep. 29, 2018

Accepted: Dec. 7, 2018

Published Online: Mar. 8, 2019

The Author Email: Hongchao Zhang (hongchao@njust.edu.cn), Jian Lu (lujian@mail.njust.edu.cn)

DOI:10.3788/COL201917.031601

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology