Microelectronics, Volume. 53, Issue 1, 170(2023)

Study on the Failure Hot Spots Behavior in GaN-Based HEMT

LIAO Zhoulin... OU Bingxian, WANG Yanping, LI Jinxiao and YAN Dawei |Show fewer author(s)
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    References(11)

    [1] [1] YAHAYA N Z, RAETHAR M B K, AWAN M. Review on gallium nitride HEMT device technology for high frequency converter applications [J]. J Power Elec, 2009, 9(1): 36-42.

    [4] [4] GAREAU J, HOU R Y, EMADI A. Review of loss distribution, analysis, and measurement techniques for GaN HEMTs [J]. IEEE Trans Power Elec, 2020, 35(7): 7405-7418.

    [5] [5] JOH J, GAO F, PALACIOS T, et al. A model for the critical voltage for electrical degradation of GaN high electron mobility transistors [J]. IEEE Elec Dev Lett, 2008, 29(4): 287-289.

    [6] [6] YAN D W, REN J, YANG G F, et al. Surface acceptor- like trap model for gate leakage current degradation in lattice-matched InAlN/GaN HEMTs [J]. IEEE Elec Dev Lett, 2015, 36(12): 1281-1283.

    [7] [7] EFTHYMIOU L, MURUKESAN K, LONGOBARDI G, et al. Understanding the threshold voltage instability during off-state stress in p-GaN HEMTs [J]. IEEE Elec Dev Lett, 2019, 40(8): 1253-1256.

    [8] [8] WANG M, CHEN K J. Off-state breakdown characterization in AlGaN/GaN HEMT using drain injection technique [J]. IEEE Trans Elec Dev, 2010, 57(7): 1492-1496.

    [9] [9] DING Z M, WU Z X, DUAN C. Application of emission microscope (EMMI) in failure analysis [J]. J Chinese Elec Microscopy Society, 2019, 38(2): 156-158.

    [10] [10] CHEN L L, JIN N, YAN D W, et al. Charge transport in vertical GaN Schottky barrier diodes: a refined physical model for conductive dislocations [J]. IEEE Trans Elec Dev, 2020, 67(3): 841-846.

    [11] [11] VETURY R, ZHANG N Q, KELLER S, et al. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs [J]. IEEE Trans Elec Dev, 2001, 48(3): 560-566.

    [12] [12] REN J, YAN D W, YANG G F, et al. Current transport mechanisms in lattice-matched Pt/Au-InAlN/GaN Schottky diodes [J]. J Appl Phys, 2015, 117(15): 154503-1-154503-5.

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    LIAO Zhoulin, OU Bingxian, WANG Yanping, LI Jinxiao, YAN Dawei. Study on the Failure Hot Spots Behavior in GaN-Based HEMT[J]. Microelectronics, 2023, 53(1): 170

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    Paper Information

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    Received: Feb. 8, 2022

    Accepted: --

    Published Online: Dec. 15, 2023

    The Author Email:

    DOI:10.13911/j.cnki.1004-3365.220044

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