Microelectronics, Volume. 53, Issue 1, 170(2023)
Study on the Failure Hot Spots Behavior in GaN-Based HEMT
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LIAO Zhoulin, OU Bingxian, WANG Yanping, LI Jinxiao, YAN Dawei. Study on the Failure Hot Spots Behavior in GaN-Based HEMT[J]. Microelectronics, 2023, 53(1): 170
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Received: Feb. 8, 2022
Accepted: --
Published Online: Dec. 15, 2023
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