Optoelectronics Letters, Volume. 12, Issue 3, 192(2016)
TEM study of dislocations structure in In0.82Ga0.18As/In Pheterostructure with InGaAs as buffer layer
[2] [2] L. Avakyants, P.Y. Bokov, T. Kolmakova and A. Chervyako, Semiconductors 38, 1384 (2004).
[3] [3] X. Jin, H. Nakahara, K. Saitoh, T. Saka, T. Ujihara, N. Tanaka and Y. Takeda, Journal of Crystal Growth 353, 84 (2012).
[4] [4] L.S. Liu, Optoelectronics Letters 6, 191 (2010).
[5] [5] J.F. Geisz, S. Kurtz, M.W. Wanlass, J.S. Ward, A. Duda, D.J. Friedman, J.M. Olson, W.E. McMahon, T.E. Moriarty and J.T. Kiehl, Applied Physics Letters 91, 023502 (2007).
[6] [6] L. Avakyants, P.Y. Bokov, G. Galiev, V. Kaminskii, V. Kul’bachinskii, V. Mokerov and A. Chervyakov, Optics and Spectroscopy 93, 857 (2002).
[7] [7] M. Hostut, M. Alyoruk, T. Tansel, A. Kilic, R. Turan, A. Aydinli and Y. Ergun, Superlattices and Microstructures 79, 116 (2015).
[8] [8] N. Tounsi, M.M. Habchi, Z. Chine, A. Rebey and B. El Jani, Superlattices and Microstructures 59, 133 (2013).
[9] [9] T. Zhang, G. Miao, Y. Jin, H. Jiang, Z. Li and H. Song, Journal of Alloys and Compounds 458, 363 (2008).
[10] [10] K. Oe, Journal of Crystal Growth 219, 10 (2000).
[11] [11] S. Wang, W. Wang, H. Zhu, L. Zhao, R. Zhang, F. Zhou, H. Shu and R. Wang, Journal of Crystal Growth 260, 464 (2004).
[12] [12] Y. Zhu, H.Q. Ni, H.L. Wang, J.F. He, M.F. Li, X.J. Shang and Z.C. Niu, Optoelectronics Letters 7, 325 (2011).
[13] [13] S.K. Mathis, P. Chavarkar, A.M. Andrews, U.K. Mishra and J.S. Speck, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 18, 2066 (2000).
[14] [14] M. Gutiérrez, D. González, G. Aragón, M. Hopkinson and R. García, Materials Science and Engineering: B 80, 27 (2001).
[15] [15] L.J. Mawst, J.D. Kirch, C.C. Chang, T. Kim, T. Garrod and D. Botez, Journal of Crystal Growth 370, 230 (2013).
[16] [16] L. Zhao, J.G. Sun, Z.X. Guo and G.Q. Miao, Materials Letters 106, 222 (2013).
[17] [17] L.H. Wong, J.P. Liu, F. Romanato, C.C. Wong and Y.L. Foo, Applied Physics Letters 90, 061913 (2007).
[18] [18] T. Wosiński, T. Figielski, A. M kosa, W. Dobrowolski, O. Pelya and B. Pécz, Materials Science and Engineering: B 91, 367 (2002).
[19] [19] J. Kim, E. Yun, J. Yu, K. Park, S. Chai, J. Yang and S. Choi, Materials Letters 53, 446 (2002).
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ZHAO Liang, GUO Zuo-xing, YUAN De-zeng, WEI Qiu-lin, ZHAO Lei. TEM study of dislocations structure in In0.82Ga0.18As/In Pheterostructure with InGaAs as buffer layer[J]. Optoelectronics Letters, 2016, 12(3): 192
Received: Dec. 24, 2015
Accepted: --
Published Online: Oct. 12, 2017
The Author Email: Lei ZHAO (zljolly@jlu.edu.cn)