TEM study of dislocations structure in In<sub>0.82</sub>Ga<sub>0.18</sub>As/In Pheterostructure with InGaAs as buffer layer

Liang ZHAO; Zuo-xing GUO; De-zeng YUAN; Qiu-lin WEI; Lei ZHAO

doi:10.1007/s11801-016-5272-6

Optoelectronics Letters, Volume. 12, Issue 3, 192(2016)

TEM study of dislocations structure in In_0.82Ga_0.18As/In Pheterostructure with InGaAs as buffer layer

Liang ZHAO... Zuo-xing GUO, De-zeng YUAN, Qiu-lin WEI and Lei ZHAO* |Show fewer author(s)

Key Lab of Automobile Materials, Ministry of Education, College of Materials Science and Engineering, Jilin University, Changchun 130025, China

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ZHAO Liang, GUO Zuo-xing, YUAN De-zeng, WEI Qiu-lin, ZHAO Lei. TEM study of dislocations structure in In_0.82Ga_0.18As/In Pheterostructure with InGaAs as buffer layer[J]. Optoelectronics Letters, 2016, 12(3): 192

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Paper Information

Received: Dec. 24, 2015

Accepted: --

Published Online: Oct. 12, 2017

The Author Email: Lei ZHAO (zljolly@jlu.edu.cn)

DOI:10.1007/s11801-016-5272-6

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology

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